HGT1S20N35G3VL

HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS April 1995 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs Packages JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175oC • Ignition Energy Capable Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit. PACKAGING AVAILABILITY PART NUMBER HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS PACKAGE T0-220AB T0-262AA T0-263AB BRAND 20N35GVL 20N35GVL 20N35GVL COLLECTOR (FLANGE) JEDEC TO-262AA EMITTER COLLECTOR GATE JEDEC TO-263AB M A A COLLECTOR (FLANGE) A GATE EMITTER Terminal Diagram N-CHANNEL ENHANCEMENT MODE COLLECTOR NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N35G3VLS9A. The development type number for this device is TA49076. R1 GATE R2 EMITTER Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS 375 24 20 20 ±10 26 18 775 150 1.0 -40 to +175 260 6 Collector-Emitter Bkdn Voltage At 10mA, RGE = 1kΩ . . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . IC25 At VGE = 5.0V, TC = +100oC . . . . . . . . . . . . . . . . . . . .IC100 Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Inductive Switching Current At L = 2.3mH, TC = +25o C . . . . . . . . . . . . . . . . . . . . . ISCIS At L = 2.3mH, TC = +175oC . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . EAS Power Dissipation Total At TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD NOTE: May be exceeded if IGEM is limited to 10mA. CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 UNITS V V A A V A A mJ W W/oC oC oC KV File Number 4006 3-66 Specifications HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage SYMBOL BVCES TEST CONDITIONS IC = 10mA, VGE = 0V TC = +175oC TC = +25oC TC = -40oC Collector-Emitter Breakdown Voltage BVCER IC = 10mA VGE = 0V RGE = 1kΩ TC = +175oC TC = +25oC TC = -40oC Gate-Emitter Plateau Voltage VGEP IC = 10A VCE = 12V IC = 10A VGE = 5V VCE = 12V IC = 10A RG = 0Ω IC = 10mA VCE = 250V VCE = 250V Collector-Emitter Saturation Voltage VCE(SAT) IC = 10A VGE = 4.5V TC = +25oC TC = +25oC MIN 310 320 320 300 315 315 TYP 345 350 355 340 345 350 3.7 MAX 380 380 390 375 375 390 UNITS V V V V V V V Gate Charge QG(ON) - 28.7 - nC Collector-Emitter Clamp Bkdn. Voltage BVCE(CL) TC = +175oC TC = +25oC TC = +25oC TC = +175oC TC = +25oC TC = +175oC TC = +25oC TC = +175oC TC = +25oC TC = +25oC TC = +25oC 325 360 395 V Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current BVECS ICES 20 1.3 32 1.3 1.25 1.6 1.9 1.8 5 250 1.6 1.5 2.8 3.5 2.3 V µA µA V V V V V IC = 20A VGE = 5.0V Gate-Emitter Threshold Voltage VGE(TH) IC = 1mA VCE = VGE Gate Series Resistance Gate-Emitter Resistance Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-Off Time-Inductive Load R1 R2 IGES BVGES tD(OFF)I + tF(OFF)I VGE = ±10V IGES = ±2mA 10 ±400 ±12 - 1.0 17 ±590 ±14 15 25 ±1000 30 kΩ kΩ µA V µs IC = 10A, RG = 25Ω, L = 550 H, R L = 26.4Ω, VGE = 5V, VCL = 300V, TC = +175oC L = 2.3mH, VG = 5V, RG = 0Ω TC = +175oC TC = +25oC Inductive Use Test ISCIS 18 26 - - 1.0 A A oC/W Thermal Resistance RθJC 3-67 HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Typical Performance Curves PULSE DURATION = 250µs, DUTY CYCLE