HGT1S20N60C3S9A

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. • 45A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging Formerly developmental type TA49178. JEDEC STYLE TO-247 Ordering Information PART NUMBER E C PACKAGE G BRAND HGTG20N60C3 TO-247 G20N60C3 HGTP20N60C3 TO-220AB G20N60C3 HGT1S20N60C3S TO-263AB G20N60C3 COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N60C3S9A. JEDEC TO-220AB (ALTERNATE VERSION) Symbol C E G C G COLLECTOR (FLANGE) E JEDEC TO-263AB COLLECTOR (FLANGE) G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES UNITS 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 45 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 300 A Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 20A at 600V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 164 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E ARV 100 mJ Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 4 µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 10 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 10Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage PARAMETER BVCES IC = 250µA, VGE = 0V 600 - - V Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 28 - V - - 250 µA Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage SYMBOL ICES VCE(SAT) VGE(TH) IGES SSOA VGEP TEST CONDITIONS VCE = BVCES IC = IC110 VGE = 15V TC = 25oC TC = 150oC - - 5.0 mA TC = 25oC - 1.4 1.8 V TC = 150oC IC = 250µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH - 1.5 1.9 V 3.4 4.8 6.3 V - - ±250 nA VCE = 480V 120 - - A VCE = 600V 20 - - A ICE = IC110, VCE = 0.5 BVCES - 8.4 - V On-State Gate Charge QG(ON) ICE = IC110 VCE = 0.5 BVCES VGE = 15V - 91 110 nC VGE = 20V - 122 145 nC Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10Ω L = 1mH Test Circuit (Figure 17) - 28 32 ns Current Rise Time Current Turn-Off Delay Time Current Fall Time trI td(OFF)I 24 28 ns - 151 210 ns - 55 98 ns - 295 320 µJ EON2 - 500 550 µJ EOFF - 500 700 µJ tfI Turn-On Energy (Note 4) EON1 Turn-On Energy (Note 4) Turn-Off Energy (Note 3) ©2001 Fairchild Semiconductor Corporation - HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS MIN TYP MAX UNITS - 28 32 ns IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10Ω L = 1mH Test Circuit (Figure 17) - 24 28 ns - 280 450 ns - 108 210 ns - 380 410 µJ mJ Turn-On Energy (Note 4) EON1 Turn-On Energy (Note 4) EON2 - 1.0 1.1 Turn-Off Energy (Note 3) EOFF - 1.2 1.7 mJ 0.76 oC/W Thermal Resistance Junction To Case RθJC - - NOTES: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. Unless Otherwise Specified VGE = 15V 40 30 20 10 0 25 75 50 100 125 150 140 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH 120 100 80 60 40 20 0 0 TC , CASE TEMPERATURE (oC) VGE 15V 10V 15V 10V 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.76oC/W, SEE NOTES 1 2 5 10 20 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX , OPERATING FREQUENCY (kHz) 75oC 75oC 110oC 110oC 300 400 500 700 600 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA TJ = 150oC, RG = 10Ω, L = 1mH, V CE = 480V TC 200 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 100 100 14 450 VCE = 360V, RG = 10Ω, TJ = 125oC 12 400 ISC 10 350 8 300 6 250 4 200 tSC 2 150 10 11 12 13 14 ISC , PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 50 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 15 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Unless Otherwise Specified (Continued) 100 80 TC = -55oC 60 TC = 25oC TC = 150oC 40 20 DUTY CYCLE