HGT1S7N60C3DS9A

HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057. „14A, 600V at TC = 25oC „ 600V Switching SOA Capability „ Typical Fall Time...................140ns at TJ = 150oC „ Short Circuit Rating „ Low Conduction Loss „ Hyperfast Anti-Parallel Diode The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49121. JEDEC TO-263AB JEDEC TO-220AB COLLECTOR (FLANGE) GATE EMITTER COLLECTOR (FLANGE) EMITTER COLLECTOR GATE C JEDEC TO-262 EMITTER COLLECTOR GATE G COLLECTOR (FLANGE) E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2005 Fairchild Semiconductor Corporation HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B 1 1 www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes September 2005 Symbol BVCES IC25 IC110 Parameter Collector to Emitter Voltage Collector Current Continuous At TC = 25oC Collector Current Continuous At TC = 110oC Ratings 600 Units V 14 A 7 A I(AVG) Average Diode Forward Current at 110oC 8 A ICM Collector Current Pulsed (Note 1) 56 A VGES Gate to Emitter Voltage Continuous ±20 V VGEM Gate to Emitter Voltage Pulsed ±30 V SSOA PD Switching Safe Operating Area at TJ = 150oC (Figure 14) Power Dissipation Total at TC = 25oC Power Dissipation Derating TC > 25oC TJ, TSTG Operating and Storage Junction Temperature Range TL Maximum Lead Temperature for Soldering tSC 40A at 480V 60 W 0.487 W/oC -40 to 150 o C 260 o C Short Circuit Withstand Time (Note 2) at VGE = 15V 1 µs Short Circuit Withstand Time (Note 2) at VGE = 10V 8 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 50W. Thermal Characteristics RθJC Thermal Resistance IGBT 2.1 oC/W Thermal Resistance Diode 2.0 oC/W Package Marking and Ordering Information Part Number Package Brand HGTP7N60C3D TO-220AB G7N60C3D HGT1S7N60C3DS TO-263AB G7N60C3D HGT1S7N60C3D TO-262 G7N60C3D NOTES:When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A. 2 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B 1 www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 600 - - V - 250 2.0 µA mA Off Characteristics BVCES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0V ICES Collector to Emitter Leakage Current VCE = BVCES, TC = 25oC VCE = BVCES, TC = 150oC IGES Gate-Emitter Leakage Current VGE = ±25V Collector to Emitter Saturation Voltage IC = IC110, VGE = 15V VCE(SAT) - - ±250 nA - 1.6 2.0 V - 1.9 2.4 V 3.0 5.0 6.0 V VCE(PK) = 480V 40 - - A VCE(PK) = 600V 60 - - A - 8 - V TC = 25oC TC = 150oC On Characteristics VGE(TH) Gate-Emitter Threshold Voltage IC = 250µA, VCE = VGE, TC = 25oC 150oC, SSOA Switching SOA TJ = RG = 50Ω , VGE = 15V, L = 1mH VGEP Gate to Emitter Plateau Voltage IC = IC110, VCE = 0.5 BVCES Switching Characteristics td(ON)I Current Turn-On Delay Time trI Current Rise Time td(OFF)I Current Turn-Off Delay Time tfI Current Fall Time EON Turn-On Energy EOFF Turn-Off Energy (Note 3) QG(ON) On-State Gate Charge TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 50Ω L = 1mH - 8.5 - ns - 11.5 - ns - 350 400 ns - 140 275 ns - 165 - µJ - 600 - µJ VGE = 15V IC = IC110, VCE = 0.5 BVCES VGE = 20V - 23 30 nC - 30 38 nC IEC = 7A - 1.9 2.5 V IEC = 7A, dIEC/dt = 200A/µs - 25 37 ns IEC = 1A, dIEC/dt = 200A/µs - 18 30 ns Drain-Source Diode Characteristics and Maximum Ratings VEC trr Diode Forward Voltage Diode Reverse Recovery Time NOTES: 3.Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTP7N60C3D and HGT1S7N60C3DS were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. 3 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B 1 www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Electrical Characteristics TA = 25°C unless otherwise noted ICE, COLLECTOR TO EMITTER CURRENT (A) 30 25 TC = 150oC 20 o TC = 25 C 15 TC = -40oC 10 5 0 4 6 8 10 12 VGE, GATE TO EMITTER VOLTAGE (V) 14 TC = -40oC 20 15 TC = 150oC 10 TC = 25oC 5 0 0 1 2 3 25 4 tSC , SHORT CIRCUIT WITHSTAND TIME (µs) ICE , DC COLLECTOR CURRENT (A) 9 6 3 75 100 125 150 TC , CASE TEMPERATURE (oC) Figure 5. MAXIMUM DC COLLECTOR CURRENT vs CASE TEMPERATURE 7.5V 0 7.0V 0 2 4 6 8 10 40 PULSE DURATION = 250µs DUTY CYCLE