HGT1S3N60C3DS

HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 File Number 4140.2 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49119. Features • 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Ordering Information PART NUMBER HGTP3N60C3D HGT1S3N60C3DS PACKAGE TO-220AB TO-263AB BRAND G3N60C3D G3N60C3D JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e., HGT1S3N60C3DS9A. Symbol C GATE EMITTER COLLECTOR (FLANGE) G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTP3N60C3D, HGT1S3N60C3DS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTP3N60C3D, HGT1S3N60C3DS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 10V (Figure 6) . . . . . . . . . . . . . . . . . . . . .tSC 600 6 3 24 ±20 ±30 18A at 480V 33 0.27 -40 to 150 260 8 UNITS V A A A V V W W/ oC oC oC µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 82Ω. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250µA, VGE = 0V VCE = BVCES VCE = BVCES IC = IC110, VGE = 15V IC = 250µA, VCE = VGE VGE = ±25V TJ = 150oC RG = 82Ω VGE = 15V L = 1mH IC = IC110, VCE = 0.5 BVCES TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 82Ω L = 1mH VCE(PK) = 480V VCE(PK) = 600V TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC MIN 600 3.0 18 2 TYP 1.65 1.85 5.5 MAX 250 2.0 2.0 2.2 6.0 ±250 UNITS V µA mA V V V nA A A Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time Thermal Resistance NOTE: VGEP QG(ON) td(ON)I trI td(OFF)I tfI EON EOFF VEC tRR RθJC IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V - 8.3 10.8 13.8 5 10 325 130 85 245 2.0 22 17 - 13.5 17.3 400 275 2.5 28 22 3.75 3.0 V nC nC ns ns ns ns µJ µJ V ns ns oC/W oC/W IEC = 3A IEC = 3A, dIEC/dt = 200A/µs IEC = 1A, dIEC/dt = 200A/µs IGBT Diode 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTP3N60C3D and HGT1S3N60C3DS were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. 2 HGTP3N60C3D, HGT1S3N60C3DS Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 20 18 16 14 12 10 8 6 4 2 0 4 6 8 10 12 14 VGE, GATE TO EMITTER VOLTAGE (V) TC = 150oC TC = 25oC TC = - 40oC DUTY CYCLE