HGT1S2N120BNS

HGTP2N120BN, HGTD2N120BNS, HGT1S2N120BNS Data Sheet January 2000 File Number 4696.2 12A, 1200V, NPT Series N-Channel IGBT The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49312. Features • 12A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Avalanche Rated • Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.intersil.com • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER HGTP2N120BN HGTD2N120BNS HGT1S2N120BNS PACKAGE TO-220AB TO-252AA TO-263AB BRAND 2N120BN 2N120BN 2N120BN Packaging JEDEC TO-220AB E C COLLECTOR (FLANGE) G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB and TO-252AA variant in Tape and Reel, e.g., HGT1S2N120BNS9A. Symbol C JEDEC TO-252AA COLLECTOR (FLANGE) G E E G JEDEC TO-263AB COLLECTOR (FLANGE) G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 SABER™ is a trademark of Analogy, Inc. HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTP2N120BN, HGTD2N120BNS HGT1S2N120BNS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 1200 12 5.6 20 ±20 ±30 12A at 1200V 104 0.83 18 -55 to 150 300 260 8 15 UNITS V A A A V V W W/oC mJ oC oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. ICE = 3A, L = 4mH, TJ = 25oC. 3. VCE(PK) = 840V, TJ = 125oC, RG = 51Ω . Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250µA, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 150oC MIN 1200 15 6.0 12 TYP 40 2.45 3.6 6.8 10.2 24 32 21 11 185 100 83 370 195 MAX 250 0.5 2.7 4.2 ±250 30 39 25 15 240 130 500 270 UNITS V V µA µA mA V V V nA A V nC nC ns ns ns ns µJ µJ µJ Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) VGE(TH) IGES SSOA VGEP QG(ON) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF IC = 2.3A, VGE = 15V TC = 25oC TC = 150oC Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge IC = 20µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 51Ω, VGE = 15V, L = 400µH, VCE(PK) = 1200V IC = 2.3A, VCE = 0.5 BVCES IC = 2.3A, VCE = 0.5 BVCES VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 4) Turn-On Energy (Note 4) Turn-Off Energy (Note 5) IGBT and Diode at TJ = 25oC ICE = 2.3A VCE = 0.8 BVCES VGE = 15V RG = 51Ω L = 5mH Test Circuit (Figure 18) 2 HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 4) Turn-On Energy (Note 4) Turn-Off Energy (Note 5) Thermal Resistance Junction To Case NOTES: 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. 5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RθJC TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = 2.3A VCE = 0.8 BVCES VGE = 15V RG = 51Ω L = 5mH Test Circuit (Figure 18) MIN TYP 25 11 195 160 83 725 280 MAX 30 15 260 200 1000 380 1.2 UNITS ns ns ns ns µJ µJ µJ oC/W Typical Performance Curves 12 ICE , DC COLLECTOR CURRENT (A) Unless Otherwise Specified ICE , COLLECTOR TO EMITTER CURRENT (A) 14 12 10 8 6 4 2 0 VGE = 15V 10 8 6 4 2 0 TJ = 150oC, RG = 51Ω, VGE = 15V, L = 1mH 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 TC , CASE TEMPERATURE (oC) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA VCE = 840V, RG = 51Ω, TJ = 125oC 20 35 ISC TC = 75oC, VGE = 15V, IDEAL DIODE 100 TC 75oC 75oC VGE 15V 12V tSC 50 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION TC VGE (DUTY FACTOR = 50%) 110oC 15V RØJC = 1.2oC/W, SEE NOTES 110oC 12V 0.5 1.0 2.0 15 30 10 25 10 5 5.0 12 13 14 15 20 ICE , COLLECTOR TO EMITTER CURRENT (A) VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 3 ISC, PEAK SHORT CIRCUIT CURRENT (A) fMAX , OPERATING FREQUENCY (kHz) TJ = 150oC, RG = 51Ω, L = 5mH, V CE = 960V tSC , SHORT CIRCUIT WITHSTAND TIME (µs) 25 40 HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) 10 Unless Otherwise Specified (Continued) ICE , COLLECTOR TO EMITTER CURRENT (A) 10 TC = -55oC 8 TC = 25oC 6 TC = 150oC 4 8 TC = 25oC 6 TC = -55oC 4 TC = 150oC 2 DUTY CYCLE < 0.5%, VGE = 12V 250µs PULSE TEST 0 0 1 2 3 4 5 6 7 2 DUTY CYCLE < 0.5%, VGE = 15V 250µs PULSE TEST 0 0 1 2 3 4 5 6 7 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE RG = 51Ω, L = 5mH, VCE = 960V 1.5 EOFF , TURN-OFF ENERGY LOSS (mJ) 2.0 EON2 , TURN-ON ENERGY LOSS (mJ) 400 350 300 250 200 150 100 50 0 0 RG = 51Ω, L = 5mH, VCE = 960V TJ = 150oC, VGE = 12V, VGE = 15V TJ = 150oC, VGE = 12V OR 15V 1.0 TJ = 25oC, VGE = 12V OR 15V 0.5 TJ = 25oC, VGE = 12V, VGE = 15V 0 0 1 2 3 4 5 ICE , COLLECTOR TO EMITTER CURRENT (A) 1 2 3 4 5 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 45 tdI , TURN-ON DELAY TIME (ns) 40 35 30 25 20 40 RG = 51Ω, L = 5mH, VCE = 960V 35 TJ = 25oC, TJ = 150oC, VGE = 12V trI , RISE TIME (ns) 30 25 20 15 10 5 TJ = 25oC, TJ = 150oC, VGE = 15V 0 5 0 RG = 51Ω, L = 5mH, VCE = 960V TJ = 25oC, TJ = 150oC, VGE = 12V TJ = 25oC OR TJ = 150oC, VGE = 15V 15 0 1 2 3 4 1 2 3 4 5 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 4 HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS Typical Performance Curves 450 td(OFF)I , TURN-OFF DELAY TIME (ns) 400 tfI , FALL TIME (ns) 350 300 250 200 150 100 0 1 2 3 4 5 ICE , COLLECTOR TO EMITTER CURRENT (A) VGE = 12V, VGE = 15V, TJ = 150oC Unless Otherwise Specified (Continued) RG = 51Ω, L = 5mH, VCE = 960V 400 350 300 250 RG = 51Ω, L = 5mH, VCE = 960V TJ = 150oC, VGE = 12V OR 15V 200 150 100 50 VGE = 12V, VGE = 15V, TJ = 25oC TJ = 25oC, VGE = 12V OR 15V 0 1 2 3 4 5 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 30 25 20 15 10 5 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 20V 250µs PULSE TEST 20 IG(REF) = 1mA, RL = 260Ω, TC = 25oC 15 VCE = 1200V 10 VCE = 400V 5 VCE = 800V TC = 25oC TC = 150oC 7 8 9 10 TC = -55oC 11 12 13 14 15 0 0 VGE , GATE TO EMITTER VOLTAGE (V) 0 5 10 15 20 25 30 35 QG , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS ICE , COLLECTOR TO EMITTER CURRENT (A) 0.8 FREQUENCY = 1MHz 3.0 2.5 2.0 1.5 DUTY CYCLE < 0.5%, TC = 110oC 250µs PULSE TEST C, CAPACITANCE (nF) 0.6 CIES 0.4 VGE = 15V VGE = 10V 1.0 0.5 0 0.2 COES CRES 0 5 10 15 20 25 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE 5 HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS Typical Performance Curves ZθJC , NORMALIZED THERMAL RESPONSE Unless Otherwise Specified (Continued) 100 0.5 0.2 0.1 10-1 0.05 0.02 0.01 10-2 SINGLE PULSE 10-4 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-3 10-2 10-1 PD t2 100 t1 10-5 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTP2N120BND 90% VGE L = 5mH VCE RG = 51Ω + ICE VDD = 960V 90% 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2 - FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS 6 HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 19. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.