HGT1S10N120BNS

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They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. • 35A, 1200V, TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. • Avalanche Rated Formerly Developmental Type TA49290. Ordering Information PART NUMBER • 1200V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.fairchildsemi.com • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Packaging PACKAGE BRAND HGTG10N120BN TO-247 G10N120BN HGTP10N120BN TO-220AB 10N120BN HGT1S10N120BNS TO-263AB 10N120BN JEDEC STYLE TO-247 E C COLLECTOR (FLANGE) G NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g. HGT1S10N120BNST. Symbol C JEDEC TO-220AB (ALTERNATE VERSION) G COLLECTOR (FLANGE) E C G E JEDEC TO-263AB COLLECTOR (FLANGE) G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 ©2002 Fairchild Semiconductor Corporation 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1 HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG10N120BN HGTP10N120BN HGT1S10N120BNS UNITS 1200 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 35 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 17 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 80 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 55A at 1200V Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 298 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.38 W/oC Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV 80 mJ Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300 260 oC oC Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8 µs Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 15 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. ICE = 20A, L = 400µH, TJ = 25oC. 3. VCE(PK) = 840V, TJ = 125oC, RG = 10Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 1200 - - V Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 - - V TC = 25oC - - 250 µA TC = 125oC - 150 - µA TC = 150oC - - 2 mA TC = 25oC - 2.45 2.7 V TC = 150oC - 3.7 4.2 V 6.0 6.8 - V - - ±250 nA 55 - - A - 10.4 - V VGE = 15V - 100 120 nC VGE = 20V - 130 150 nC Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current ICES VCE(SAT) VGE(TH) IGES VCE = 1200V IC = 10A, VGE = 15V IC = 90µA, VCE = VGE VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 10Ω, VGE = 15V, L = 400µH, VCE(PK) = 1200V Gate to Emitter Plateau Voltage VGEP IC = 10A, VCE = 600V On-State Gate Charge ©2002 Fairchild Semiconductor Corporation QG(ON) IC = 10A, VCE = 600V HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1 HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 10A VCE = 960V VGE = 15V RG = 10Ω L = 2mH Test Circuit (Figure 18) tfI MIN TYP MAX UNITS - 23 26 ns - 11 15 ns - 165 210 ns - 100 140 ns Turn-On Energy (Note 5) EON1 - 0.32 0.4 mJ Turn-On Energy (Note 5) EON2 - 0.85 1.1 mJ Turn-Off Energy (Note 4) EOFF - 0.8 1.0 mJ Current Turn-On Delay Time td(ON)I - 21 25 ns - 11 15 ns - 190 250 ns - 140 200 ns Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI IGBT and Diode at TJ = 150oC ICE = 10A VCE = 960V VGE = 15V RG = 10Ω L = 2mH Test Circuit (Figure 18) Turn-On Energy (Note 5) EON1 - 0.4 0.5 mJ Turn-On Energy (Note 5) EON2 - 1.75 2.3 mJ Turn-Off Energy (Note 4) EOFF - 1.1 1.4 mJ 0.42 oC/W Thermal Resistance Junction To Case RθJC - - NOTES: 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 35 VGE = 15V 30 25 20 15 10 5 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2002 Fairchild Semiconductor Corporation 150 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 60 50 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 400µH 40 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1 HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS TJ = 150oC, RG = 10Ω, L = 2mH, V CE = 960V 100 50 TC = 75oC, VGE = 15V, IDEAL DIODE 10 1 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.42oC/W, SEE NOTES 2 TC 75oC 75oC 110oC 110oC 5 VGE 15V 12V 15V 12V 10 20 25 200 20 tSC 150 10 100 5 12 40 30 TC = 25oC 20 TC = 150oC 10 6 4 8 10 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE