IRHLNJ77034

PD-97301 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRHLNJ77034 IRHLNJ73034 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.035Ω 0.035Ω ID 22A* 22A* 2N7606U3 IRHLNJ77034 60V, N-CHANNEL TECHNOLOGY ™ SMD-0.5 International Rectifier’s R7 TM L ogic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. Features: n n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @VGS = 4.5V,TC = 25°C ID @VGS = 4.5V,TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page 22* 20 88 57 0.45 ±10 63 22 5.7 8.8 -55 to 150 300 (for 5s) 1.0 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns °C g www.irf.com 1 05/06/08 IRHLNJ77034, 2N7606U3 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 60 — — 1.0 — 24 — — — — — — — — — — — — — — — Typ Max Units — 0.068 — — -4.9 — — — — — — — — — — — — 4.0 2015 488 4.5 1.18 — — 0.035 2.0 — — 1.0 10 100 -100 34 8.0 12 26 7.0 54 19 — — — — V V/°C Ω V mV/°C S µA nA Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 4.5V, ID = 20A à VDS = VGS, ID = 250µA V DS = 10V, IDS = 20A à VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125°C VGS = 10V VGS = -10V VGS = 4.5V, ID = 22A VDS = 30V VDD = 30V, ID = 22A, VGS = 5.0V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Ciss C oss C rss Rg Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance nC ns nH pF Ω Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min Typ Max Units — — — — — — — — — — 22* 88 1.2 286 704 Test Conditions A V ns nC Tj = 25°C, IS = 22A, VGS = 0V à Tj = 25°C, IF = 22A, di/dt ≤ 100A/µs VDD ≤ 25V à ton Forward Turn-On Time * Current is limited by package Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC Junction-to-Case Min Typ Max Units — — 2.2 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHLNJ77034, 2N7606U3 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-3) Static Drain-to-Source On-state „ Resistance (SMD-0.5) Diode Forward Voltage„ Upto 300K Rads (Si)1 Min 60 1.0 — — — — — — Max Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 250µA VGS = VDS , ID = 250µA VGS = 10V VGS = -10V VDS = 48V, VGS=0V VGS = 4.5V, ID = 20A VGS = 4.5V, ID = 20A V GS = 0V, ID = 22A — 2.0 100 -100 1.0 0.03 0.035 1.2 1. Part numbers IRHLNJ77034, IRHLNJ73034 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area Ion LET (MeV/(mg/cm )) Kr Xe Au 37.3 63.3 90 2 Energy (MeV) 400 435 1480 Range (µm) 48.6 38.4 80.4 0V 60 60 60 -1V 60 60 -2V 60 60 -3V 60 60 - VDS (V) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= -4V 60 60 - -5V 60 - -7V 60 - -8V 35 - 70 60 50 40 30 20 10 0 0 -1 -2 -3 -4 VGS -5 -6 -7 -8 Kr Xe Au Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com VDS 3 IRHLNJ77034, 2N7606U3 Pre-Irradiation 100 ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) VGS TOP 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.50V BOTTOM 2.30V 100 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.50V BOTTOM 2.30V TOP 10 2.3V 2.30V 1 0.1 60µs PULSE WIDTH, Tj = 25°C 1 10 100 60µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 T J = 150°C ID, Drain-to-Source Current (A) 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 22A 1.5 10 1.0 T J = 25°C 1 0.5 0.1 2 2.5 3 VDS = 25V 15 60µs PULSE WIDTH 3.5 4 4.5 5 VGS = 4.5V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHLNJ77034, 2N7606U3 RDS(on), Drain-to -Source On Resistance (m Ω) 90 80 70 60 50 40 30 20 10 0 2 4 6 8 ID = 22A RDS(on), Drain-to -Source On Resistance ( mΩ) 100 100 90 80 70 60 50 40 30 20 10 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) Vgs = 4.5V T J = 25°C TJ = 150°C TJ = 150°C T J = 25°C 10 12 VGS, Gate -to -Source Voltage (V) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 90 2.5 VGS(th) Gate threshold Voltage (V) ID = 1.0mA 2.0 80 1.5 1.0 70 0.5 ID = 50µA ID = 250µA ID = 1.0mA ID = 150mA 60 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( °C ) T J , Temperature ( °C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 8. Typical Threshold Voltage Vs Temperature www.irf.com 5 IRHLNJ77034, 2N7606U3 Pre-Irradiation 4000 3600 3200 C oss = C ds + C gd C, Capacitance (pF) 2800 2400 2000 1600 1200 800 400 0 1 10 100 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd 12 ID = 22A 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 55 60 QG, Total Gate Charge (nC) VDS = 48V VDS = 30V VDS = 12V Ciss Coss Crss FOR TEST CIRCUIT SEE FIGURE 17 VDS, Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 T J = 150°C 35 LIMITED BY PACKAGE 30 ID, Drain Current (A) ISD, Reverse Drain Current (A) 10 T J = 25°C 25 20 15 10 5 0 1 0.1 VGS = 0V 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD , Source-to-Drain Voltage (V) 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 11. Typical Source-to-Drain Diode Forward Voltage Fig 12. Maximum Drain Current Vs. Case Temperature 6 www.irf.com Pre-Irradiation IRHLNJ77034, 2N7606U3 1000 EAS , Single Pulse Avalanche Energy (mJ) 120 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100 80 ID 9.8A 13.9A BOTTOM 22A TOP 10 100µs 1ms 60 40 1 Tc = 25°C Tj = 150°C Single Pulse 1 10 VDS , Drain-to-Source Voltage (V) 10ms 20 0.1 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 1 P DM t1 t2 0.1 0.01 1E-005 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 7 IRHLNJ77034, 2N7606U3 Pre-Irradiation V(BR)DSS 15V tp VDS L DRIVER RG VGS 20V . D.U.T IAS tp + - VDD A 0.01Ω I AS Fig 16b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. Fig 16a. Unclamped Inductive Test Circuit 4.5V QG 12V 50KΩ .2µF .3µF QGS VG QGD VGS 3mA D.U.T. + V - DS Charge Fig 17a. Basic Gate Charge Waveform VDS VGS RG VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % IG ID Current Sampling Resistors Fig 17b. Gate Charge Test Circuit VDS 90% RD D.U.T. VDD + - 10% VGS td(on) tr t d(off) tf Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 8 www.irf.com Pre-Irradiation IRHLNJ77034, 2N7606U3 Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L= 0.26mH Peak IL = 22A, VGS = 10V  ISD ≤ 22A, di/dt ≤ 328A/µs, VDD ≤ 60V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. 10 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 48 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-0.5 PAD ASSIGNMENTS 1 = DRAIN 2 = GATE 3 = SOURCE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2008 www.irf.com 9