IRHLYS77034CM

PD-97291 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary Part Number IRHLYS77034CM IRHLYS73034CM Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 20A* 20A* 2N7607T3 IRHLYS77034CM 60V, N-CHANNEL TECHNOLOGY ™ Low-Ohmic TO-257AA International Rectifier’s R7TM L ogic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. Features: n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P-Channel Available IRHLYS797034CM Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC =100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 20* 20* 80 75 0.6 ±10 98 20 7.5 6.9 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns °C 300 (0.063in/1.6mm from case for 10s) 4.3 (Typical) g www.irf.com 03/13/08 1 IRHLYS77034CM, 2N7607T3 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS / ∆ TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 60 — — 1.0 — 19 — — — — — — — — — — — — Typ Max Units — 0.07 — — -5.0 — — — — — — — — — — — — 6.8 — — 0.045 2.0 — — 1.0 10 100 -100 34 8.0 13 30 7.0 60 20 — V V/°C Ω V mV/°C S µA nA Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 4.5V, ID = 20 à VDS = VGS, ID = 250µA VDS = 10V, IDS = 20A à VDS= 48V ,VGS = 0V VDS = 48V, VGS = 0V, TJ = 125°C VGS = 10V VGS = -10V VGS = 4.5V, ID = 20A VDS = 30V VDD = 30V, ID = 20A, VGS = 5.0V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nC ns nH Ciss Coss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance — — — 2025 484 5.1 1.16 — — — pF Ω Measured from Drain lead ( 6mm / 0.025 in from package ) to Source lead ( 6mm/ 0.025 in from package ) VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 20* 80 1.2 200 705 A V ns nC Test Conditions Tj = 25°C, IS = 20A, VGS = 0V à Tj = 25°C, IF = 20A, di/dt ≤ 100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max — — — — 1.67 80 Units °C/W Test Conditions Typical Socket Mount Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHLYS77034CM, 2N7607T3 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-3) Static Drain-to-Source On-state „ Resistance (Low Ohmic TO-257) Diode Forward Voltage„ Up to 300K Rads (Si)1 Min 60 1.0 — — — — — — Max Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 250µA VGS = VDS, ID = 250µA VGS = 10V VGS = -10V VDS = 48V, VGS=0V VGS = 4.5V, ID = 20A VGS = 4.5V, ID = 20A VGS = 0V, ID = 20A — 2.0 100 -100 10 0.045 0.045 1.2 1. Part numbers IRHLYS77034, IRHLYS73034 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area Ion LET (MeV/(mg/cm )) Kr Xe Au 37.3 63.3 90 2 Energy (MeV) 400 435 1480 Range (µm) 48.6 38.4 80.4 0V 60 60 60 -1V 60 60 -2V 60 60 -3V 60 60 - VDS (V) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= -4V 60 60 - -5V 60 - -6V 60 - -7V 35 - 70 60 50 40 30 20 10 0 0 -1 -2 -3 -4 -5 -6 -7 VGS Kr Xe Au Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com VDS 3 IRHLYS77034CM, 2N7607T3 Pre-Irradiation 100 VGS TOP 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.50V BOTTOM 2.25V 100 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.50V BOTTOM 2.25V TOP ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) 10 1 2.25V 60µs PULSE WIDTH Tj = 25°C 0.1 1 10 100 2.25V 60µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 0.1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 T J = 150°C 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 20A 1.5 ID, Drain-to-Source Current (A) 10 T J = 25°C 1 1.0 0.5 0.1 2 2.5 3 VDS = 25V 15 60µs PULSE WIDTH 3.5 4 4.5 5 VGS = 4.5V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHLYS77034CM, 2N7607T3 RDS(on), Drain-to -Source On Resistance (m Ω) 90 80 70 60 50 40 30 20 10 0 2 4 6 8 ID = 20A RDS(on), Drain-to -Source On Resistance ( mΩ) 100 100 90 80 70 60 50 40 30 20 10 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) Vgs = 4.5V T J = 25°C T J = 150°C T J = 150°C T J = 25°C 10 12 VGS, Gate -to -Source Voltage (V) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 90 2.5 VGS(th) Gate threshold Voltage (V) ID = 1.0mA 2.0 80 1.5 1.0 70 0.5 ID = 50µA ID = 250µA ID = 1.0mA ID = 150mA 60 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( °C ) T J , Temperature ( °C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 8. Typical Threshold Voltage Vs Temperature www.irf.com 5 IRHLYS77034CM, 2N7607T3 Pre-Irradiation 3600 3200 2800 C oss = C ds + C gd 2400 2000 1600 1200 800 400 0 1 Ciss Coss VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd 12 ID = 20A 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 55 60 QG, Total Gate Charge (nC) VDS = 48V VDS = 30V VDS = 12V C, Capacitance (pF) Crss 10 100 FOR TEST CIRCUIT SEE FIGURE 17 VDS, Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 T J = 150°C 35 LIMITED BY PACKAGE 30 ID, Drain Current (A) ISD, Reverse Drain Current (A) 10 T J = 25°C 25 20 15 10 5 0 1 0.1 VGS = 0V 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD , Source-to-Drain Voltage (V) 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 11. Typical Source-Drain Diode Forward Voltage Fig 12. Maximum Drain Current Vs. Case Temperature 6 www.irf.com Pre-Irradiation IRHLYS77034CM, 2N7607T3 1000 EAS , Single Pulse Avalanche Energy (mJ) 200 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 180 160 140 120 100 80 60 40 20 0 ID 8.9A 12.6A BOTTOM 20A TOP 10 100µs 1ms 1 Tc = 25°C Tj = 150°C Single Pulse 1 10 VDS , Drain-to-Source Voltage (V) 10ms 0.1 100 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.05 SINGLE PULSE ( THERMAL RESPONSE ) P DM t1 t2 0.1 0.02 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 0.01 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 7 IRHLYS77034CM, 2N7607T3 Pre-Irradiation V(BR)DSS 15V tp VDS L DRIVER RG VGS 20V . D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 16b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. Fig 16a. Unclamped Inductive Test Circuit 4.5V QG 12V 50KΩ .2µF .3µF QGS VG QGD VGS 3mA D.U.T. + V - DS Charge Fig 17a. Basic Gate Charge Waveform VDS VGS RG VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % IG ID Current Sampling Resistors Fig 17b. Gate Charge Test Circuit VDS 90% RD D.U.T. VDD + - 10% VGS td(on) tr t d(off) tf Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 8 www.irf.com Pre-Irradiation IRHLYS77034CM, 2N7607T3 à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L = 0.49 mH Peak IL = 20A, VGS = 10V  ISD ≤ 20A, di/dt ≤ 347A/µs, VDD ≤ 60V, TJ ≤ 150°C 10 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 48 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — Low Ohmic TO-257AA A 10.66 [.420] 10.42 [.410] 3X Ø 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035] CERAMIC EYELETS 13.63 [.537] 13.39 [.527] 1 2 3 16.89 [.665] 16.39 [.645] 10.92 [.430] 10.42 [.410] B C 15.88 [.625] 12.70 [.500] 0.71 [.028] MAX. STANDARD PIN-OUT OPTIONAL PIN-OUT 2.54 [.100] 2X 3X Ø 0.88 [.035] 0.64 [.025] CA B 3.05 [.120] Ø 0.50 [.020] NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2008 www.irf.com 9