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2N4920

2N4920

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N4920 - Silicon PNP Power Transistors - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2N4920 数据手册
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION ・With TO-126 package ・Complement to type 2N4921/4922/4923 ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For driver circuits ,switching ,and amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N4918 VCBO Collector-base voltage 2N4919 2N4920 2N4918 VCEO Collector-emitter voltage 2N4919 2N4920 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -1 -3 -1 30 150 -65~150 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.16 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N4918 VCEO(SUS) Collector-emitter sustaining voltage 2N4919 2N4920 VCEsat VBEsat VBE Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N4918 ICEO Collector cut-off current 2N4919 2N4920 ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 fT COB Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Output capacitance IC=-1.0A ;IB=-0.1A IC=-1.0A ;IB=-0.1A IC=-1A ; VCE=-1V VCE=-20V; IB=0 VCE=-30V; IB=0 VCE=-40V; IB=0 IC=-0.1A; IB=0 2N4918 2N4919 2N4920 CONDITIONS MIN -40 -60 -80 TYP. MAX UNIT V -0.6 -1.3 -1.3 V V V -0.5 mA VCB= Rated VCBO ;IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=125℃ VEB=-5V; IC=0 IC=-50mA ; VCE=-1V IC=-500mA ; VCE=-1V IC=-1A ; VCE=-1V IC=-250mA ; VCE=-10V;f=1MHz f=100kHz ; VCB=-10V;IE=0 40 30 10 3.0 -0.1 -0.1 -0.5 -1.0 mA mA mA 150 MHz 100 pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N4918 2N4919 2N4920 Fig.2 Outline dimensions 3
2N4920 价格&库存

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