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2N6030

2N6030

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N6030 - Silicon PNP Power Transistors - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2N6030 数据手册
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5629 2N5630 ・High power dissipations APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6029 2N6030 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6029 VCBO Collector-base voltage 2N6030 2N6029 VCEO Collector-emitter voltage 2N6030 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -120 -7 -16 -20 -5.0 200 150 -65~200 V A A A W ℃ ℃ Open emitter -120 -100 V CONDITIONS VALUE -100 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6029 2N6030 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6029 IC=-0.2A ;IB=0 2N6030 VCEsat-1 VCEsat-2 VBEsat VBE ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current 2N6029 ICEO Collector cut-off current 2N6030 VCE=-60V; IB=0 VCE=ratedVCB VCE=ratedVCB; TC=150℃ VEB=-7V; IC=0 2N6029 hFE-1 DC current gain 2N6030 hFE-2 COB fT DC current gain Output capacitance Transition frequency IC=-16A ; VCE=-2V IE=0 ; VCB=-10V ;f=0.1MHz IC=-1A ; VCE=-20V 1.0 IC=-8A ; VCE=-2V 20 4 1000 pF MHz 80 25 -1.0 mA -5.0 -1.0 100 mA IC=-10A; IB=-1A IC=-16A ;IB=-4A IC=-10A; IB=-1A IC=-8A ; VCE=-2V VCB=ratedVCBO; IE=0 VCE=-50V; IB=0 -1.0 mA -120 -1.0 -2.0 -1.8 -1.5 -1.0 V V V V mA CONDITIONS MIN -100 V TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage ICEV Collector cut-off current (VBE(off)=1.5V) IEBO Emitter cut-off current 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6029 2N6030 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3
2N6030 价格&库存

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