2N6316

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6317/6318 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6315 2N6316 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6315 VCBO Collector-base voltage 2N6316 2N6315 VCEO Collector-emitter voltage 2N6316 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 80 5 7 15 2 90 200 -65~200 V A A A W ℃ ℃ Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.94 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6315 VCEO(SUS) Collector-emitter sustaining voltage 2N6316 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N6315 ICEO Collector cut-off current 2N6316 2N6315 ICBO Collector cut-off current 2N6316 ICEX IEBO hFE-1 hFE-2 hFE-3 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency VCB=80V; IE=0 VCE=Rated VCE; VBE(off)=1.5V TC=150℃ VEB=5V; IC=0 IC=0.5A ; VCE=4V IC=2.5A ; VCE=4V IC=7A ; VCE=4V IC=0.25A;VCE=10V;f=1.0MHz VCE=40V; IB=0 VCB=60V; IE=0 IC=4A; IB=0.4 A IC=7A; IB=1.75A IC=7A; IB=1.75A IC=2.5A ; VCE=4V VCE=30V; IB=0 IC=0.1A ;IB=0 CONDITIONS 2N6315 2N6316 MIN 60 TYP. MAX UNIT V 80 1.0 2.0 2.5 1.5 V V V V 0.5 mA 0.25 mA 0.25 2.0 1.0 35 20 4 4 100 mA mA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6315 2N6316 Fig.2 outline dimensions 3