2N6316

2N6316 2N6318 MECHANICAL DATA Dimensions in mm (inches) COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 2 0.71 (0.028) 0.86 (0.034) COMPLEMENTARY TRANSISTORS 2N6316 (NPN) AND 2N6318 (PNP) FEATURES 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) • Low Collector Emitter Saturation Voltage • Low Leakage Current • Excellent DC Current Gain TO–66 (TO-213AA) Pin 1 –Base Pin 2 –Emitter Case – Collector APPLICATIONS: Designed for general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) VCEO VCBO VEBO IC IB PD TSTG , TJ RθJC Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current 80V 80V 5V 7A 15A 2A 90W 0.515W/°C –65 to +200°C 1.94°C/W Continuous Peak Base Current Total Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance – Junction - Case Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5354 Issue 1 2N6316 2N6318 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter OFF CHARACTERISTICS VCEO(sus) ICEO ICEX ICBO IEBO Collector – Emitter Sustaining Voltage * Collector Cut–off Current Collector Cut–off Current Collector Cut–off Current Emitter Cut–off Current ON CHARACTERISTICS * VCE = 4V hFE VCE(sat) VBE(sat) VBE(on) DC Current Gain Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Base – Emitter On Voltage DYNAMIC CHARACTERISTICS Cob Output Capacitance VCB = 10V f = 1MHz VCE = 10V fT hfe Current Gain – Bandwidth Product Small Signal Current Gain DYNAMIC CHARACTERISTICS tr ts tf Rise Time Storage Time Fall Time VCC = 30V IC = 2.5A IB1 = IB =0.25A 0.7 1.0 0.8 µS IC = 0.25A f = 1MHz VCE = 4V f = 1kHz IC = 0.5A 20 — 4.0 MHz IE = 0 300 pF VCE = 4V VCE = 4V IC = 4A IC = 7A IC = 7A VCE = 4V IC = 0.5A IC = 2.5A IC = 7.0A IB = 0.4A IB = 1.75A IB = 1.75A IC = 2.5A 35 20 4 1.0 2.0 2.5 1.5 V 100 — IC = 100mA VCE = 40V VCE = 80V VCB = 80V VEB = 5V IB = 0 IB = 0 VBE(off) = 1.5V TC = 150°C IE = 0 IC = 0 80 0.5 0.25 2.0 0.25 1.0 mA V Test Conditions Min. Typ. Max. Unit Notes *Pulse test: t = 300µs , Duty Cycle = 2% p Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5354 Issue 1