2N6753

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N6753 2N6754 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6753 VCBO Collector-base voltage 2N6754 VCEO VEBO IC IB PD Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open base Open collector Open emitter 1000 500 8 10 5 150 -65~175 -65~200 V V A A W ℃ ℃ CONDITIONS VALUE 900 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6753 2N6754 MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 500 V VCEsat-1 VCEsat-2 Collector-emitter saturation voltage IC=5A; IB=1A IC=10A; IB=3A 1.0 V Collector-emitter saturation voltage 3.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A VCE=900V; VBE=-1.5V TC=100℃ VCE=1000V; VBE=-1.5V TC=100℃ VEB=8V; IC=0 1.3 0.1 1.0 V 2N6753 ICEV Collector cut-off current 2N6754 mA 0.1 1.0 2.0 mA IEBO Emitter cut-off current hFE COB DC current gain IC=5A ; VCE=3V IE=0 ; VCB=10V;f=0.1MHz 8 40 Output capacitance 50 250 pF fT Transition frequency IC=0.2A ; VCE=10V 15 60 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6753 2N6754 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3