2SA743

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA743 DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -50V (Min) ·Complement to Type 2SC1212 APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ -1 A 0.75 W PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 8 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA743 MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -50 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞ -50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -4 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -1.5 V VBE(on) Base-Emitter On Voltage IC= -50mA ; VCE= -4V -1.0 V ICER Collector Cutoff Current VCE= -50V; RBE= 1kΩ -20 μA hFE-1 DC Current Gain IC= -50mA ; VCE= -4V 60 200 hFE-2 DC Current Gain IC= -1A ; VCE= -4V 20 fT Current-Gain—Bandwidth Product IC= -30mA ; VCE= -4V 120 MHz hFE-1 Classifications B 60-120 C 100-200 isc Website：www.iscsemi.cn 2