2SB827

Inchange Semiconductor Product Specification Silicon PNP Power Transistors · 2SB827 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1063 ・Wide area of safe operation ・Low collector-emitter saturation voltage : VCE(sat)=(–)0.4V max. APPLICATIONS ・Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -6 -7 -14 60 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=∞ IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-4A; IB=-0.4A VCB=-40V ;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-5A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 10 MIN -50 -60 -6 TYP. 2SB827 MAX UNIT V V V -0.4 -0.1 -0.1 280 V mA mA MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2.0A; IB1=-IB2=-0.2A VCC=-20V;RL=10Ω 0.20 0.70 0.10 μs μs μs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB827 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB827 4