2SB858

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB857 2SB858 DESCRIPTION ・With TO-220C package ・Complement to type 2SD1133/1134 APPLICATIONS ・Low frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Tc=25℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SB857 VCEO Collector-emitter voltage 2SB858 VEBO IC ICP PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -60 -5 -4 -8 40 150 -45~150 V A A W ℃ ℃ CONDITIONS Open emitter VALUE -70 -50 V UNIT V Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB857 IC=-50mA; RBE=∞ 2SB858 V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Transition frequency IC=-10μA; IE=0 IE=-10μA; IC=0 IC=-2 A;IB=-0.2 A IC=-1A ; VCE=-4V VCB=-50V; IE=0 IC=-1A ; VCE=-4V IC=-0.1A ; VCE=-4V IC=-0.5A ; VCE=-4V CONDITIONS 2SB857 2SB858 MIN -50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -60 -70 -5 -1.0 -1.0 -1 60 35 15 MHz 320 V V V V μA hFE-1 classifications B 60-120 C 100-200 D 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB857 2SB858 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB857 2SB858 4