2SC3272

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3272 DESCRIPTION ·With TO-126 package ·High breakdown voltage APPLICATIONS ·For power amplification PINNING（see Fig.2） PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 300 300 5 0.1 0.2 10 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3272 TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5m A IC=10μA;IE=0 2.0 V V(BR)CBO Collector-base breakdown voltage 300 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 IE=10μA; IC=0 300 V V(BR)EBO Emitter-base breakdown voltage 5 V hFE DC current gain IC=10mA ; VCE=10V 39 180 μA μA ICBO Collector cut-off current VCB=200V; IE=0 0.5 IEBO Emitter cut-off current VEB=4V; IC=0 0.5 COB Output capacitance IE=0; VCB=30V;f=1MHz 3 pF fT Transition frequency IC=10mA ; VCB=30V 50 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3272 Fig.2 outline dimensions 3