2SC3272

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3272 DESCRIPTION ·With TO-126 package ·High breakdown voltage APPLICATIONS ·For power amplification PINNING see Fig.2 PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 300 300 5 0.1 0.2 10 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector cut-off current Emitter cut-off current Output capacitance Transition frequency CONDITIONS IC=50mA ;IB=5m A IC=10µA;IE=0 IC=1mA; IB=0 IE=10µA; IC=0 IC=10mA ; VCE=10V VCB=200V; IE=0 VEB=4V; IC=0 IE=0; VCB=30V;f=1MHz IC=10mA ; VCB=30V 50 300 300 5 39 MIN 2SC3272 SYMBOL VCEsat V(BR)CBO V(BR)CEO V(BR)EBO hFE ICBO IEBO COB fT TYP. MAX 2.0 UNIT V V V V 180 0.5 0.5 3 µA µA pF MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3272 Fig.2 outline dimensions 3