2SC3795A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・High speed switching ・Low collector saturation voltage APPLICATIONS ・For high breakdown voltate ,high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3795 2SC3795A ・ Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SC3795 VCBO Collector-base voltage 2SC3795A VCEO VEBO IC ICM IB Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open base Open collector Open emitter 900 500 8 5 10 3 40 W V V A A A CONDITIONS VALUE 800 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency 2SC3795 2SC3795A CONDITIONS IC=0.2A , L=25mH IC=3A; IB=0.6A IC=3A ;IB=0.6A VCB=800V; IE=0 2SC3795 2SC3795A MIN 500 TYP. MAX UNIT V 1.0 1.5 V V ICBO 0.1 VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 8 0.1 mA IEBO hFE-1 hFE-2 fT mA MHz Switching times 2SC3795 ton Turn-on time 2SC3795A ts Storage time 2SC3795 tf Fall time 2SC3795A 1.2 IC=3A; IB1=- IB2=0.6A VCC=200V 1.2 3.0 1.0 μs μs 1.0 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3795 2SC3795A Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795 2SC3795A 4