2SC3795B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795B DESCRIPTION ・With TO-220F package ・High breakdown voltage ・Fast switching speed ・Low collector saturation voltage APPLICATIONS ・For high voltalge ,high-speed switching applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 50 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 1300 600 8 6 3 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A , L=25mH IC=3A; IB=0.6A IC=3A ;IB=0.6A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 MIN 600 2SC3795B TYP. MAX UNIT V 1.0 1.5 100 100 V V μA μA 8 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3795B Fig.2 Outline dimensions 3