2SC3973B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3973B DESCRIPTION ・With TO-220Fa package ・High voltage,high speed ・Wide area of safe operation APPLICATIONS ・For high voltage,high speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Maximum operating junction temperature Storage temperature 45 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 1000 500 8 7 15 4 2 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3973B TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 500 V VCEsat VBEsat Collector-emitter saturation voltage IC=4A; IB=0.8A IC=4A; IB=0.8A 1.0 V Base-emitter saturation voltage 1.5 V μA μA ICBO Collector cut-off current VCB=1000V; IE=0 100 IEBO Emitter cut-off current VEB=5V; IC=0 100 hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=4A ; VCE=5V 8 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3973B Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3