2SC4138

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4138 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 4 A PC 80 W ℃ TJ 150 Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4138 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 0.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.3 V Collector Cutoff Current VCB= 500V ; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 0.1 mA hFE DC Current Gain IC= 6A ; VCE= 4V 10 30 COB Output Capacitance IE= 0 ; VCB= 10V; ftest=1.0MHz IE= -0.7A ; VCE= 12V 85 pF fT Current-Gain—Bandwidth Product 10 MHz Switching Times μs μs μs ton Turn-on Time IC= 6A,IB1= 0.6A; IB2= -1.2A RL= 33.3Ω; VCC= 200V 1.0 tstg Storage Time 3.0 tf Fall Time 0.5 isc Website：www.iscsemi.cn 2