2SC4138

2SC4138 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Unit ICBO VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 10(Pulse20) A hFE 10 to 30 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.7A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF V 5.45±0.1 VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 33.3 6 10 –5 0.6 –1.2 1max 3max 0.5max 1 2 3 Collector-Emitter Voltage V C E (V) 0.05 0.1 0.5 1 5 m m t on •t stg • t f – I C Characteristics (Typical) 5 0.02 0.1 0.5 1 5 10 t s tg V C C 200V I C :I B1 :–I B 2 =10:1:2 1 0.5 t on tf 0.1 0.1 0.5 N 0.05 5 1 0µ 5 10 0.1 5 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% 10 50 100 Collector-Emitter Voltage V C E (V) 500 ) se T –55˚C (Cas e Te mp) emp ) mp Te se 40 nk 1 60 si Collecto r Cur ren t I C (A) (Ca P c – T a Derating at Collector-Emitter Voltage V C E (V) 500 1000 he 100 5 0.5 100 ite 50 10 fin 0.1 10 1 In Without Heatsink Natural Cooling 5 (Ca 0.3 ith 0.5 25˚C 0.5 W 1 1.2 80 10 5 1.0 Time t(ms) s 10 0.8 1 Maxim um Power Dissi pation P C (W) 10 0.6 3 30 30 s 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 1m 0.2 Collector Current I C (A) Collector Current I C (A) Collecto r Curr ent I C (A) Transient Thermal Resistance 10 Switching Ti me ec o R –55˚C ot DC Cur rent Gain h FE 25˚C t o n• t s tg • t f (µ s) 10 125˚C 0 Base-Emittor Voltage V B E (V) (V C E =4V) 50 ˚C 0 10 Collector Current I C (A) h FE – I C Characteristics (Typical) 100 Collector Current I C (A) rN V C E (sat) 0 0.02 4 4 2 θ j- a ( ˚C/W) 0 6 en 0 V B E (sat) 125 I B =100m A 2 (V C E =4V) 10 fo 200m A 4 I C – V BE Temperature Characteristics (Typical) d 400mA 6 Weight : Approx 2.0g a. Part No. b. Lot No. 8 1 de 600 mA 1.4 E ew 1.4 1A 8 Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (sa t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) A (I C /I B =5) 0.65 +0.2 -0.1 5.45±0.1 C es ig IC (A) 1.2 2 3 D RL (Ω) 10 ø3.2±0.1 B VCC (V) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 2.0±0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) a 4.8±0.2 b IB Tstg 15.6±0.4 9.6 ns VCE=4V, IC=6A 4.0 IC 19.9±0.3 VEBO Symbol 1.8 Ratings V 5.0±0.2 Conditions 500 2.0 Unit VCBO Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0max ■Electrical Characteristics Ratings 20.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 20 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 91