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2SC4509

2SC4509

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SC4509 - Silicon NPN Power Transistors - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2SC4509 数据手册
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4509 DESCRIPTION ・With TO-3PML package ・High voltage ,high speed switching ・Low collector saturation voltage APPLICATIONS ・Switching regulators ・DC-DC convertors ・Solid state relay ・General purpose power amplifiers PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 10 10 3 80 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 1.56 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4509 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-base breakdown voltage Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=1mA; IE=0 IC=0.2A; IB=0 IE=1mA; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=450V; IE=0 VEB=10V; IC=0 IC=1A ; VCE=5V 25 MIN 500 400 10 0.8 1.2 100 100 65 TYP. MAX UNIT V V V V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=5A;RL=30Ω IB1=0.5A; IB2=-1A Pw = 20μs; Duty≤2% 1.0 2.5 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4509 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4509 4
2SC4509 价格&库存

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