2SC4509

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4509 DESCRIPTION ·With TO-3PML package ·High voltage ,high speed switching ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC convertors ·Solid state relay ·General purpose power amplifiers PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 10 10 3 80 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 1.56 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4509 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=1mA; IE=0 IC=0.2A; IB=0 IE=1mA; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=450V; IE=0 VEB=10V; IC=0 IC=1A ; VCE=5V 25 MIN 500 400 10 0.8 1.2 100 100 65 TYP. MAX UNIT V V V V V µA µA SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE Switching times ton tstg tf Turn-on time Storage time Fall time IC=5A;RL=30A IB1=0.5A; IB2=-1A Pw = 20µs; DutyB2% 1.0 2.5 0.5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4509 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4509 4