2SC4531

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4531 DESCRIPTION ・With TO-3P(H)IS package ・High voltage,high speed ・Low saturation voltage ・Bult-in damper diode APPLICATIONS ・Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 10 20 5 50 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4531 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO hFE Cob VF fT PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Diode forward voltage Transition frequency CONDITIONS IE=200mA ;IC=0 IC=7A; IB=1.7A IC=7A; IB=1.7A VCB=500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IF=7A IC=0.1A ; VCE=10V 1 66 8 210 1.5 3 1.8 pF V MHz 100 MIN 5 5 1.5 10 200 TYP. MAX UNIT V V V μA mA Switching times resistive load ts tf Storage time Fall time 1.8 0.1 2.5 0.2 μs μs ICP=7A;IB1 =1.4A IB2 =-2.8A; RL=28.5Ω 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4531 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4531 4