2SD1175

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1175 DESCRIPTION ・With TO-3 package ・Built-in damper diode ・High voltage ,high power dissipation ・Wide area of safe operation APPLICATIONS ・Line-operated horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 1500 5 5 100 150 -65~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1175 MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA; IC=0; 5 V VCEsat Collector-emitter saturation voltage IC=4.0 A;IB=0.8 A 5.0 V VBEsat Base-emitter saturation voltage IC=4.0 A;IB=0.8 A 1.5 V VCB=750V;IE=0 ICBO Collector cut-off current VCB=1500V;IE=0 50 μA 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 30 hFE-2 DC current gain IC=4A ; VCE=10V 5 VF Diode forward voltage IF=4A 2.5 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1175 Fig.2 Outline dimensions 3