SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1175
DESCRIPTION ·With TO-3 package ·Built-in damper diode ·High voltage ,high power dissipation ·Wide area of safe operation APPLICATIONS ·Line-operated horizontal deflection output applications
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 1500 5 5 100 150 -65~150 UNIT V V V A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SD1175
SYMBOL
TYP.
MAX
UNIT
V(BR)EBO
Emitter-base breakdown voltage
IE=500mA; IC=0;
5
V
VCEsat
Collector-emitter saturation voltage
IC=4.0 A;IB=0.8 A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4.0 A;IB=0.8 A
1.5
V
VCB=750V;IE=0 ICBO Collector cut-off current VCB=1500V;IE=0
50
µA
1.0
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
10
30
hFE-2
DC current gain
IC=4A ; VCE=10V
5
VF
Diode forward voltage
IF=4A
2.5
V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1175
Fig.2 Outline dimensions
3
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