2SD1398

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1398 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching APPLICATIONS ·For TV and CRT display horizontal output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7 5 120 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT VF PARAMETER Collector- emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Diode forward voltage CONDITIONS IC=100mA; RBE=∞ IC=5mA; IE=0 IE=200mA; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=800V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V IEC=5A 40 8 3 MIN 800 1500 7 2SD1398 TYP. MAX UNIT V V V 5.0 1.5 10 130 V V μA mA MHz 2.0 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1398 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3