SD1398

SD1398 RF & MICROWAVE TRANSISTORS 8 50-960 MHz APPLICATIONS . . . . . . 850 - 960 MHZ 24 VOLTS COMMON EMITTER OVERLAY GEOMETRY GOLD METALLIZATION P OUT = 6.0 W MIN. WITH 10.0 dB GAIN .230 6LFL (M142) epoxy sealed ORDER CODE SD1398 BRANDING SD1398 PIN CONNECTION DESCRIPTION The SD1398 is a gold metallized epitaxial silicon NPN transistor designed for high linearity Class AB operation cellular base station applications. The SD1398 can also be operated Class C. The SD1398 is internally input matched and can be used as a driver for the SD1423 or SD1424. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 50 35 3.5 2.4 53 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance September 8, 1993 3.3 °C/W 1/6 SD1398 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVEBO I CEO I CBO hFE IC = 5mA IC = 5mA IE = 5mA VCE = 24V VCB = 24V VCE = 10V IE = 0mA IB = 0mA IC = 0mA IE = 0mA IE = 0mA IC = 0.1A 50 24 3.5 — — 20 — — — — — — — — — 1.0 1.0 100 V V V mA mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT ηc GP COB Note: P IN f = 850 — 960 MHz f = 850 — 960 MHz f = 850 — 960 MHz f = 1 MHz = 0.60w VCE = 24 V VCE = 24 V VCE = 24 V VCB = 24 V ICQ = 25 mA ICQ = 25 mA ICQ = 25 mA 6 — 10 — — 50 12 7.5 — — — 8.5 W % dB pF TYPICAL PERFORMANCE CLASS AB BROADBAND OUTPUT POWER vs INPUT POWER OUTPUT POWER vs INPUT POWER 2/6 SD1398 IMPEDANCE DATA ZIN 900 MHz 850 MHz 960 MHz ZCL 960 MHz 850 MHz 900 MHz FREQ. 850 MHz 900 MHz 950 MHz ZIN (Ω) 2.6 + j 5.4 3.3 + j 6.1 4.6 + j 5.9 ZCL (Ω) 9.5 + j 13.5 9.9 + j 15.0 8.6 + j 13.0 3/6 SD1398 TEST CIRCUIT C1, C2 C7, C11 C3 C4, C5 C6, C10 C8 C9 D1 : : : : : : 240pF ATC Size A 0.1MFD 50Vdc, CK05 Type 1500pF Feedthru #9900-381-6004 Murata/Erie 0.8 - 8.0pF Johanson Gigatrim 0.01 MFD 100Vdc CK05 Type 10MFD Electrolytic, 63Vdc FB-1, FB-2 FB-3 L1 R1 R2 : 2.5 Turns, #22 AWG, Ferrite Bead : Ferrite Bead L1 Cold End : 3 Turns, #22 AWG, 0.125” I.D. : 150Ω in 5% Carbon Comp : 51Ω , Chip Resistor Er = 10.2, Height 0.05”, Teflon Glass : IN5661 Board Material: 4/6 SD1398 T EST CIRCUIT LAYOUT 5/6 SD1398 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0142 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6