2SD389

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD389 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·High Power Dissipation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ 3.0 A PC 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD389 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.2A; L= 25mH 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 3V 1.4 V ICBO Collector Cutoff Current VCB= 20V; IE= 0 30 μA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.1A; VCE= 3V 40 hFE-2 DC Current Gain IC= 1A; VCE= 3V 30 160 hFE-2 Classifications Q 30-60 P 50-100 O 80-160 isc Website：www.iscsemi.cn 2