BDY71

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY71 DESCRIPTION ·Continuous Collector Current-IC= 4A ·Collector Power Dissipation: PC= 29W @TC= 25℃ APPLICATIONS ·Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEX VCER VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 90 90 60 55 7 4 2 29 200 -65~200 UNIT V V V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 6.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCER(SUS) V(BR)EBO VCE(sat) VBE(on) ICEO ICEV IEBO hFE fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain-Bandwidth Product CONDITIONS IC= 100mA; IB= 0 IC= 100mA; RBE= 100Ω IE= 1mA; IC= 0 IC= 0.5A; IB= 50mA IC= 0.5A; VCE= 4V VCE= 30V; IB= 0 B BDY71 MIN 55 60 7 MAX UNIT V V V 1.0 1.7 0.5 1.0 5.0 1.0 80 0.8 200 V V mA mA mA VCE= 90V; VBE(off)= 1.5V VCE= 30V; VBE(off)= 1.5V,TC=150℃ VEB= 7V; IC= 0 IC= 0.5A ; VCE= 4V IC= 0.2A; VCE= 10V MHz isc Website：www.iscsemi.cn 2