BU2506DF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2506DF DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current- Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 1500 700 7.5 5 8 3 5 45 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT ℃/W Rth j-c isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2506DF TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.79A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.79A B 1.1 1.0 2.0 95 208 V ICES Collector Cutoff Current VCE= 1500V ; VBE= 0 VCE= 1500V ; VBE= 0; TC=125℃ VEB= 7.5V ; IC= 0 mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 0.3A ; VCE= 5V 12 hFE-2 DC Current Gain IC= 3A; VCE= 5V 3.8 7.5 VECF C-E Diode Forward Voltage IF= 3A 2.0 V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 47 pF Switching times μs μs tstg tf Storage Time Fall Time IC= 3A, IB(end)= 0.67A; CFB= 9.4nF LC= 1.35mH; LB= 8μH; -VBB= 4V; (-dIB/dt= 0.45A/μs) 6.0 0.5 isc Website：www.iscsemi.cn 2