BU2527AX

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2527AX DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC ICM Collector Current- Continuous 12 A Collector Current-Peak 30 A IB B Base Current- Continuous 8 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 12 A PC 45 W ℃ ℃ TJ 150 Tstg Storage Temperature Range -55~150 SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT ℃/W Rth j-c isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2527AX TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.3 0.25 2.0 0.25 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ VEB= 7.5V; IC= 0 mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 6 21 hFE-2 DC Current Gain IC= 6A; VCE= 5V 5 9 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 145 pF Switching times Storage Time Fall Time 2.0 0.2 μs μs tstg tf IC= 6A , IB(end)= 0.55A; LB= 0.6μH -VBB= 2V; (-dIB/dt= 3.33A/μs) isc Website：www.iscsemi.cn 2