BU2527AX

Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527AX DESCRIPTION ・With TO-3PML package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7.5 12 30 8 12 45 150 -55~150 UNIT V V V A A A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2527AX TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V VEBO VCEsat Emitter-base breakdown voltage IB=1mA ;IC=0 IC=6A ;IB=1.2A 7.5 13.5 V Collector-emitter saturation voltage 5.0 V VBEsat Emitter-base saturation voltage IC=6A ;IB=1.2A VCE=BVCES; VBE=0 TC=125℃ VEB=7.5V; IC=0 1.3 0.25 2.0 0.25 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=1A ; VCE=5V 6 21 hFE-2 CC DC current gain IC=6A ; VCE=5V IE=0 ; VCB=10V;f=1MHz 5 9 Collector capacitance 145 pF JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE BU2527AX Fig.2 Outline dimensions JMnic