BU408D

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU408D DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed: tf= 0.5μs(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 6A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 400 400 200 6 7 10 4 60 150 -65~150 UNIT V V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.08 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU408D TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.5 V hFE DC Current Gain IC= 2A; VCE= 5V; 15 ICEV Collector Cutoff Current VCE= 400V; VBE= -1.5V 15 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 400 mA fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V, ftest= 1MHz 10 MHz VECF C-E Diode Forward Voltage IF= 5A 1.5 V tf Fall Time IC= 6A; IB1= -IB2= 1.2A, VCC= 40V 0.5 μs isc Website：www.iscsemi.cn 2