BU4508DZ

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4508DZ DESCRIPTION ·High Voltage·High Switching Speed ·Built-in Damer Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current- Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 1500 800 7.5 8 15 4 6 32 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 4.0 UNIT ℃/W Rth j-c isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU4508DZ TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 1.03 1.0 2.0 7 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ IC= 0.5A; VCE= 5V mA hFE-1 DC Current Gain hFE-2 DC Current Gain IC= 5A; VCE= 5V 4.2 7.3 VECF C-E Diode Forward Voltage IF= 5A 2.2 V Switching times (16kHz line deflection circuit) Storage Time IC= 5A, IB1= 1A; IB2= -2.5A tf Fall Time 0.4 μs 3.75 μs tstg isc Website：www.iscsemi.cn 2