BU508DF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508DF DESCRIPTION ・With TO-3PFa package ・High voltage,high speed ・With integrated efficiency diode APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 8 15 4 6 34 150 -65~150 UNIT V V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU508DF TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 700 V VCE(sat) Collector-emitter saturation voltage IC=4.5A; IB=1.6A 1.0 V VBE(sat) Base-emitter saturation voltage IC=4.5A ;IB=2A 1.1 V IEBO Emitter cut-off current VEB=5V; IC=0 VCB=BVCBO IE=0 TC=125℃ IC=0.5A ; VCE=5V 10 300 1.0 2.0 30 mA ICES Collector cut-off current mA hFE DC current gain fT Transition frequency IC=0.1A ; VCE=5V 7 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 125 pF VF Diode forward voltage IF=4.5A 1.6 2.0 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU508DF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3