BU508DF

Transys Electronics LIMITED NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Total Power Dissipation upto Ta=25º C Tc=25º C Storage Temperature Range Max Operating Junction Temperature THERMAL RESISTANCE Thermal Resistance Junction - Case SYMBOL VCES VCEO VEBO IC ICM Ptot Tstg Tj VALUE 1500 700 5 8 15 34 60 - 65 to +150 150 UNIT V V V A W ºC ºC Rth (j-c) 2.08 ºC/W ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) . TEST CONDITIONS DESCRIPTION SYMBOL ICES VCE=VCES, VBE=0 Collector Cut off Current VCEO (sus)* IB =0, IC=100mA Collector Emitter Sustaining Voltage VEBO IE=10mA, IC =0 Emitter Base Voltage BU508F, AF IEBO VEB=5V, IC=0 Emitter Cut-off Current BU508DF hFE IC=4.5A, VCE=5V DC Current Gain VF IF=4.0A Diode forward Voltage BU508DF VCE(sat) * IC=4.5A, IB=2.0A Collector Emitter Saturation Voltage BU508AF, DF IC=4.5A, IB=2.0A BU508F Base Emitter Saturation Voltage VBE(sat) * IC=4.5A, IB=2.0A SWITCHING TIME Storage Time Fall Time MIN 700 5.0 TYP MAX 1.0 UNIT mA V V mA 300 2.25 2.0 1.0 5.0 1.5 V V V V ts tf IC=4.5A,hFE=2.5,VCC=140V LC=0.9mH, LB=3µH 7.0 0.5 µs µs * Pulse test: Pulse Duration