BU706DF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU706DF DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 700V(Min) ·High Switching Speed ·Built-in Integrated Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage VBE=0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 1500 700 6 5 8 3 5 32 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 3.95 35 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU706DF TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB= 0; L=25 mH B 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1.33A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1.33A B 1.3 0.5 1.0 10 V ICES Collector Cutoff Current VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125℃ VEB= 6V; IC=0 mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 3A; VCE= 5V 2.25 VECF C-E Diode Forward Voltage IF= 3A 1.5 2.2 V IS/B Second Breakdown Current VCE= 300V; tp= 200μs 1.0 A Switching Times tf Fall Time IC= 3A; IB(end)= 1A; LB= 12μH 0.7 μs ts Storage Time 6.5 μs isc Website：www.iscsemi.cn 2