BU505DF

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU505DF DESCRIPTION ·With TO-220Fa package ·High voltage,high speed ·Built-in damper diode. APPLICATIONS ·For horizontal deflection circuits of color TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (peak) Base current Base current(peak) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 2.5 4 2 4 20 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient MAX 55 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU505DF CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC current gain Diode forward voltage Transition frequency Collector output capacitance CONDITIONS IC=0.1 A ;IB=0;L=25mH IE=600mA ;IC=0 IC=2A ;IB=0.9 A IC=2A ;IB=0.9 A VCE =1500V;VBE=0; TC=125 IC=0.1A ;VCE=5V IC=2A ;VCE=5V IF=2A IC=0.1A ;VCE=5V IE=0;f=1MHz;VCB=10V 7 65 6 2.22 1.8 V MHz pF MIN 700 7.5 13.5 1.0 1.3 0.15 1.0 30 TYP. MAX UNIT V V V V mA SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES hFE-1 hFE-2 VF fT CC 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU505DF Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3