BUX39

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUX39 DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability APPLICATIONS ·Designed for switching-control amplifiers, power gates, switching regulators, power switching circuits converters, inverters and control circuits. Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEX VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 120 120 110 90 7 30 40 6 120 200 -65~200 UNIT V V V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.46 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEO ICEX IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 0.2A; IB= 0; L =25mH IE= 50mA; IC= 0 IC= 12A; IB= 1.2A IC= 20A ;IB= 2.5A IC= 20A ;IB= 2.5A VCE= 70V; IB= 0 B BUX39 MIN 90 7 TYP. MAX UNIT V V 1.2 1.6 2.5 1.0 1.0 5.0 1.0 15 8 8 45 V V V mA mA mA VCE= 120V;VBE= -1.5V VCE= 120V;VBE= -1.5V;TC=125℃ VEB= 5V; IC= 0 IC= 12A ; VCE= 4V IC= 20A ; VCE= 4V IC= 1A; VCE= 15V MHz Switching Times ton ts tf Turn-on Time Storage Time IC= 20A ;IB1= -IB2= 2.5A; VCC= 30V Fall Time 0.3 IC= 20A ;IB1= 2.5A; VCC= 30V 1.5 1.0 μs μs μs isc Website：www.iscsemi.cn