BUX87

® BUX87 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY (450V VCEO) MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION HIGH DC CURRENT GAIN 1 s APPLICATIONS FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The BUX87 is manufactured using High Voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage withstand capability. SOT-32 3 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = - 1.5V) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p < 5 m s) Base Current Base Peak Current (t p < 5 m s) Total Dissipation at T c = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 1000 450 5 0.5 1 0.3 0.6 40 -65 to 150 150 Unit V V V A A A A W o o C C September 2003 1/5 BUX87 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I EBO Parameter Collector Cut-off Current (V BE = - 1.5V) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = 1 000 V V CE = 1 000 V V EB = 5 V I C = 1 00 mA 450 T j = 1 25 o C Min. Typ. Max. 100 1 1 Unit µA mA mA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V BEO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ fT ts tf Collector-Base Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency RESISTIVE LOAD Storage Time Fall Time I C = 1 0 mA I C = 0 .1 A I C = 0 .2 A I C = 0 .2 A I C = 5 0 mA I C = 4 0 mA I C = 5 0 mA V CC = 2 50 V I B1 = 4 0 mA tp = 20 µs IB = 0 .01 A IB = 0 .02 A IB = 0 .02 A VCE = 5 V VCE = 5 V VCE = 1 0 V f=1MHz I C = 2 00 mA I B2 = -80 mA 5 0.8 1 1 50 12 20 4.5 0.5 V V V V MHz µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Derating Curve 2/5 BUX87 DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Reverse Biased SOA 3/5 BUX87 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 I O V 2.15 1.27 0.3 10 o DIM. 7.4 10.5 0.7 0.40 2.4 1.0 15.4 inch MAX. 7.8 10.8 0.9 0.65 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.015 0.094 0.039 0.606 0.087 0.173 0.150 3.2 2.54 0.084 0.05 0.011 10o 0.118 0.126 0.100 TYP. MAX. 0.307 0.425 0.035 0.025 0.106 0.051 0.630 TYP. 2.2 4.4 3.8 3 1: Base 2: Collector 3: Emitter 0016114/B 4/5 BUX87 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5