IRFZ44N

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage: VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VDSS VGS ID IDM PD TJ Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse (tp≤10μs) Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 55 ±20 49 160 94 175 -55~175 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.5 62 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN IRFZ44N MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 55 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V Ω RDS(on) IGSS Drain-Source On-Resistance VGS= 10V; ID= 25A VGS= ±20V;VDS= 0 VDS= 55V; VGS= 0 VDS= 55V; VGS= 0; Tj= 150℃ IS= 25A; VGS= 0 0.032 ±100 25 250 1.3 Gate-Body Leakage Current nA μA IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage V · isc Website：www.iscsemi.cn