IRFZ44N

IRFZ44N N-CHANNEL Power MOSFET APPLICATION Buck Converter High Side Switch DC motor control , Ups ...etc , & other Application VDSS 55V RDS(ON) Max. 17.5m ID 50A FEATURES Ultra Low ON Resistance Low Gate Charge Dynamic dv/dt Rating Inductive Switching Curves Peak Current vs Pulse Width Curve PIN CONFIGURATION TO-220 SYMBOL D Front View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage Drain to Current Continuous Tc = 25 , VGS@10V Continuous Tc = 100 , VGS@10V Pulsed Tc = 25 , VGS@10V (Note 1) Gate-to-Source Voltage Total Power Dissipation Derating Factor above 25 Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Repetitive Avalanche Energy (Note 1) Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds Avalanche Current (Note 1) dv/dt TJ, TSTG EA R TL TPKG IA R Continue Symbol VDSS ID ID IDM VGS PD Value 55 50 35 160 ±20 .94 0.63 5.0 -55 to 175 9.4 300 260 25 A mJ V W W/ V/ns Unit V A THERMAL RESISTANCE Symbol R R JC Parameter Junction-to-case Junction-to-ambient Min Typ Max 1.5 62 Units /W /W JA Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +175 1 cubic foot chamber, free air Page 1 IRFZ44N N-CHANNEL Power MOSFET ORDERING INFORMATION Part Number Package ....................IRFZ44N................................................TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . cIRFZ44N Characteristic OFF Characteristics Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = 250 µA) Breakdown Voltage Temperature Coefficient (Reference to 25 VDSS/ TJ IDSS ) ) IGSS IGSS ON Characteristics Gate Threshold Voltage (VDS = VGS, ID = 250 µA) Static Drain-to-Source On-Resistance (VGS = 10 V, ID = 25A) Forward Transconductance (VDS = 25 V, ID = 25A) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Integral pn-diode in MOSFET (Note 1) (IS = 25A, VGS = 0 V) (Note 4) (IF = 25A, VGS = 0 V, di/dt = 100A/µs) (Note 4) ISM VSD trr Qrr ...............160 ...............1.3 63...............95. 170..............260 A V ns nC (Note 4) Dynamic Characteristics (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDS = 44 V, ID = 25 A, VGS = 10 V) (Note 2) Ciss Coss Crss Qg Qgs Qgd Resistive Switching Characteristics (VDD = 28 V, ID = 25 A, VGS = 10 V, RG = 12 ) (Note 4) td(on) trise td(off) tfall IS .12 60 .................44 .................45 ...............50 .. ns ns ns ns A 1470 360 88 .63 14 23 pF pF pF .nC nC nC gFS 19 (Note 4) RDS(on) 17.5 S m VGS(th) 2.0 ...4.0 V 25 250 100 -100 nA nA 0.058 .V/ µA VDSS 55 ... V Symbol Min Typ Max Units , ID = 1mA) Drain-to-Source Leakage Current (VDS = 55 V, VGS = 0 V, TJ = 25 (VDS = 44 V, VGS = 0 V, TJ = 150 Gate-to-Source Forward Leakage (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) Source-Drain Diode Characteristics Notes: Q Repetitive rating; pulse width limited by max. junction temperature. (See fig. 1) S ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C R Essentially independent of operating temerpature T Pulse width ≤ 400µs; duty cycle ≤ 2%. U V Page 2 IRFZ44N N-CHANNEL Power MOSFET Duty Cycle Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case 1.000 50% Z JC, Thermal Impedance 20% 10% 0.100 5% 2% 1% PDM t1 t2 NOTES: DUTY FACTOR: D=t1/t2 PEAK TJ=PDM x Z JC x R JC+TC 0.010 single pulse 0.001 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 tp, Rectangular Pulse Duration (s) Figure 2. Maximum Power Dissipation vs Case Temperature Figure 3. Maximum Continuous Drain Current vs Case Temperature 70 PD, Power Dissipation (W) 140 ID, Drain Current (A) 120 60 50 40 100 80 60 40 20 30 20 10 0 175 0 25 50 75 100 125 150 175 25 50 75 100 125 150 TC, Case Temperature (oC) TC, Case Temperature (oC) Figure 4. Typical Output Characteristics 220 200 180 PULSE DURATION = 250 µS DUTY CYCLE = 0.5% MAX TC = 2 5 o C Figure 5. Typical Drain-to-Source ON Resistance vs Gate Voltage and Drain Current 50 45 VGS = 15V ID, Drain Current (A) 160 140 120 VGS = 10V VGS = 8V RDS(ON), Drain-to-Source 40 ON Resistance (m ID = 14A ID = 28A ID = 55 A 35 VGS = 6V VGS = 5V 100 80 60 30 25 PULSE DURATION = 250 µS DUTY CYCLE = 0.5% MAX o TC = 2 5 C VGS = 4.5V VGS = 4V VGS = 3.5V VGS = 3V 40 20 0 0 5 20 15 10 3 4 5 6 7 8 9 10 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Page 3 IRFZ44N N-CHANNEL Power MOSFET Figure 6. Maximum Peak Current Capability 10000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25 oC DERATE PEAK CURRENT AS FOLLOWS: I = I 25 150 – T C ---------------------125 IDM, Peak Current (A) 1000 100 10 VGS = 10V 1 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1E+0 10E+0 tp, Pulse Width (s) Figure 7. Typical Transfer Characteristics Figure 8. Unclamped Inductive Switching Capability 1000 ID, Drain-to-Source Current (A) 40 35 30 25 20 15 10 5 0 IAS, Avalanche Current (A) PULSE DURATION = 250 µs DUTY CYCLE = 0.5% MAX VDS = 10 V If R 0: tAV= (L/R) ln[(IAS×R)/(1.3BVDSS-VDD)+1] If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD) R equals total Series resistance of Drain circuit 100 STARTING TJ = 25 oC +175 oC +25oC -55oC 10 STARTING TJ = 150 oC 1 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1.5 2.0 2.5 3.0 3.5 4.0 VGS, Gate-to-Source Voltage (V) tAV, Time in Avalanche (s) Figure 9. Typical Drain-to-Source ON Resistance vs Drain Current Figure 10. Typical Drain-to-Source ON Resistance vs Junction Temperature 2.5 RDS(ON), Drain-to-Source ON Resistance (m ) 50 RDS(ON), Drain-to-Source Resistance (Normalized) PULSE DURATION = 10 µs DUTY CYCLE = 0.5% MAX TC=25°C 40 2.0 30 1.5 20 VGS=10V 1.0. PULSE DURATION = 250 µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 15A 10 0 50 100 150 200 250 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 ID, Drain Current (A) TJ, Junction Temperature (oC) Page 4 IRFZ44N N-CHANNEL Power MOSFET Figure 11. Typical Breakdown Voltage vs Junction Temperature BVDSS, Drain-to-Source Breakdown Voltage (Normalized) 1.20 Figure 12. Typical Threshold Voltage vs Junction Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.15 1.1 1.0 0.9 0.8 0.7 0.6 0.5 1.10 1.05 1.00 0.95 0.90 -75 -50 -25 0.0 25 50 75 VGS = 0 V ID = 250 µA 100 125 150 175 VGS = VDS ID = 250 µA -75 -50 -25 0.0 25 50 75 100 125 150 175 TJ, Junction Temperature (oC) TJ, Junction Temperature (oC) Figure 13. Maximum Forward Bias Safe Operating Area 1000 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) Figure 14. Typical Capacitance vs Drain-to-Source Voltage 3000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd Coss Cds + Cgd Crss = Cgd ID, Drain Current (A) 10µs C, Capacitance (pF) 2500 Ciss 100 100µ 2000 1500 1000 500 Coss 10 TJ = MAX RATED, TC = 25 oC Single Pulse 1.0m 10ms 1 DC Crss 0 10 100 0.01 0.1 1 10 100 1 VDS, Drain-to-Source Voltage (V) VDS, Drain Voltage (V) Figure 15. Typical Gate Charge vs Gate-to-Source Voltage VGS, Gate-to-Source Voltage (V) ISD, Reverse Drain Current (A) 12 10 VDS=45V Figure 16. Typical Body Diode Transfer Characteristics 180 160 140 120 150 oC 8 6 4 2 0 0 5 VDS=30V VDS=15V 100 80 60 25 oC -55 oC 40 20 0 VGS = 0 V ID = 59A 10 15 20 25 30 35 40 0.3 0.5 0.7 0.9 1.1 1.3 QG , Total Gate Charge (nC) VSD, Source-to-Drain Voltage (V) Page 5