FDM15-06KC5

Advanced Technical Information FMD 15-06KC5 FDM 15-06KC5 ID25 = 15 A VDSS = 600 V RDS(on) max = 0.165 Ω CoolMOS™ 1) Power MOSFET with HiPerDyn ™ FRED Buck and Boost Topologies Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge 3 3 T ISOPLUS i4™ D 4 1 2 5 1 4 D T FMD 2 E72873 5 isolated back surface FDM Features • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 40 pF) • Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness • Enhanced total power density • HiPerDyn™ FRED - consisting of series connected diodes - enhanced dynamic behaviour for high frequency operation Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) Advantages • Easy assembly: no screws or isolation foils required • Space savings • High power density • High reliability MOSFET T Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Symbol TC = 25°C TC = 90°C single pulse repetitive ID = 7.9 A; TC = 25°C Conditions TVJ = 25°C Maximum Ratings 600 ± 20 15 11 522 0.79 50 V V A A mJ mJ V/ns MOSFET dV/dt ruggedness VDS = 0...480 V Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. 150 2.5 TVJ = 25°C TVJ = 125°C 3 10 100 2000 100 40 9 13 12 5 50 5 tbd tbd tbd 1.1 0.35 52 max. 165 3.5 1 mΩ V µA µA nA pF pF nC nC nC ns ns ns ns mJ mJ mJ K/W K/W RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erec off RthJC RthCH VGS = 10 V; ID = 12 A VDS = VGS; ID = 0.79 mA VDS = 600 V; VGS = 0 V VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz VGS = 0 to 10 V; VDS = 400 V; ID = 12 A VGS = 10 V; VDS = 400 V ID = 12 A; RG = 3.3 Ω 1) with heat transfer paste CoolMOS™ is a trademark of Infineon Technologies AG. IXYS reserves the right to change limits, test conditions and dimensions. 20090209c © 2009 IXYS All rights reserved 1-3 Advanced Technical Information FMD 15-06KC5 FDM 15-06KC5 MOSFET T Symbol Source-Drain Diode Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 12 0.9 390 7.5 38 1.2 A V ns µC A IS VSD trr QRM IRM VGS = 0 V IF = 12 A; VGS = 0 V IF = 12 A; -diF /dt = 100 A/µs; VR = 400 V Diode D (data for series connection) Symbol VRRM IF25 IF90 Symbol Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C Conditions TVJ = 25°C TVJ = 150°C TVJ = 25°C TVJ = 150°C TVJ = 45°C TVJ = 25°C Maximum Ratings 600 15 8 V A A Characteristic Values min. typ. max. 2.50 3.00 2.00 2.55 1 0.08 150 3 35 2.4 0.8 V V A A µA mA A A ns K/W K/W VF IF = 15 A IF = 30 A IF = 15 A IF = 30 A IR IFSM IRM trr RthJC RthJH VR = VRRM t = 10 ms (50 Hz), sine; IF = 20 A; VR = 100 V; -diF /dt = 200 A/µs with heat transfer paste Component Symbol TVJ Tstg VISOL FC Symbol Conditions operating storage IISOL < 1 mA; 50/60 Hz mounting force with clip Conditions Maximum Ratings -55...+150 -55...+125 2500 20...120 °C °C V~ N Characteristic Values min. typ. 40 max. CP dS, dA dS, dA Weight coupling capacity between shorted pins and mounting tab in the case pF mm mm pin - pin pin - backside metal 1.7 5.5 9 g IXYS reserves the right to change limits, test conditions and dimensions. 20090209c © 2009 IXYS All rights reserved 2-3 Advanced Technical Information FMD 15-06KC5 FDM 15-06KC5 ISOPLUS i4TM Outline IXYS reserves the right to change limits, test conditions and dimensions. 20090209c © 2009 IXYS All rights reserved 3-3