IXFP38N30X3M

IXFP38N30X3M X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) D = 300V = 38A  50m  (Electrically Isolated Tab) G N-Channel Enhancement Mode OVERMOLDED TO-220 S Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C, Limited by TJM 38 A IDM TC = 25C, Pulse Width Limited by TJM 60 A IA TC = 25C 19 A EAS TC = 25C 400 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 34 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TJ G G = Gate S = Source Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight      VGS = 0V, ID = 1mA 300 VGS(th) VDS = VGS, ID = 1mA 2.5   IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 19A, Note 1  V  4.5 V 100 nA High Power Density Easy to Mount Space Savings    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 25 A 500 A TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved International Standard Package Plastic Overmolded Tab Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance Applications Characteristic Values Min. Typ. Max. BVDSS D = Drain Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Isolated Tab Features  TL TSOLD DS 34 50 m DS100874C(11/19) IXFP38N30X3M Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 19A, Note 1 20 RGi Gate Input Resistance Ciss Coss 34 S 1.9  2440 pF 330 pF 1.3 pF 130 520 pF pF 19 ns 23 ns 60 ns 14 ns 35 nC 10 nC 11 nC VGS = 0V, VDS = 25V, f = 1MHz Crss OVERMOLDED TO-220 (IXFP...M) oP 1 2 3 Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 19A RG =10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 19A Qgd Terminals: 1 - Gate 2 - Drain 3 - Source 3.7 C/W RthJC RthCS 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 38 A Repetitive, pulse Width Limited by TJM 152 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 19A, -di/dt = 100A/μs 90 330 7.4 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP38N30X3M o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 120 40 VGS = 10V 9V VGS = 10V 8V 35 100 7V 8V 80 25 20 I D - Amperes I D - Amperes 30 6V 15 7V 60 40 6V 10 5 20 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 5 10 15 VDS - Volts 30 35 Fig. 4. RDS(on) Normalized to ID = 19A Value vs. Junction Temperature o 3.0 40 VGS = 10V 8V RDS(on) - Normalized 25 6V 20 15 5V 10 VGS = 10V 2.6 7V 30 I D - Amperes 25 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125 C 35 20 2.2 I D = 38A 1.8 I D = 19A 1.4 1.0 0.6 5 4V 0.2 0 0 4.5 0.5 1 1.5 2 3 3.5 -50 4 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 19A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 3.5 BVDSS / VGS(th) - Normalized 4.0 RDS(on) - Normalized 2.5 o TJ = 125 C 3.0 2.5 o 2.0 TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 10 20 30 40 50 60 70 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 80 90 100 110 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFP38N30X3M Fig. 8. Transconductance Fig. 7. Input Admittance 70 60 o VDS = 10V 50 TJ = - 40 C VDS = 10V 60 50 g f s - Siemens I D - Amperes 40 30 o TJ = 125 C o 20 25 C o 25 C 40 o 125 C 30 20 o - 40 C 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 5 10 15 20 25 40 45 50 55 60 65 10 9 120 VDS = 150V I D = 19A 8 I G = 10mA 100 7 VGS - Volts I S - Amperes 35 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 140 80 60 o TJ = 125 C 6 5 4 3 40 2 o TJ = 25 C 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 5 10 15 20 25 30 35 QG - NanoCoulombs VSD - Volts Fig. 12. Output Capacitance Stored Energy Fig. 11. Capacitance 6 10000 5 Ciss 1000 100 Coss 10 Crss EOSS - MicroJoules Capacitance - PicoFarads 30 I D - Amperes VGS - Volts 4 3 2 1 f = 1 MHz 0 1 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 50 100 150 VDS - Volts 200 250 300 IXFP38N30X3M Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Forward-Bias Safe Operating Area 10 100 RDS(on) Limit 25μs 1 100μs Z (th)JC - K / W I D - Amperes 10 1 0.1 1ms o 0.1 TJ = 150 C 0.01 10ms o TC = 25 C Single Pulse DC 0.01 1 10 100 VDS - Volts © 2019 IXYS CORPORATION, All Rights Reserved 1,000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS REF: F_38N30X3(23G-S301) 12-15-17 IXFP38N30X3M Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. © 2019 IXYS CORPORATION, All Rights Reserved