IXTH1N170DHV

Preliminary Technical Information IXTA1N170DHV IXTH1N170DHV Depletion Mode MOSFET VDSX ID(on) RDS(on) = >  1700V 1A 16  N-Channel TO-263HV (IXTA) G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 1700 V VDGX TJ = 25C to 150C, RGS = 1M 1700 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25C 290 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 10..65 / 22..14.6 N/lb 1.13/10 Nm/lb.in 2.5 6.0 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Mounting Force (TO-263HV) Md Mounting Torque (TO-247HV) Weight TO-263HV TO-247HV G S D G = Gate S = Source D (Tab) D = Drain Tab = Drain Features • Normally ON Mode • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250A 1700 VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V 100 nA IDSX(off) VDS = VDSX, VGS = - 5V 10 A 100 A RDS(on) VGS = 0V, ID = 0.5A, Note 1 ID(on) VGS = 0V, VDS = 50V, Note 1 - 2.5 TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved V - 4.5 16 1.0 V  A • Easy to Mount • Space Savings • High Power Density Applications • • • • • • Audio Amplifiers Start-Up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads DS100609A(2/17) IXTA1N170DHV IXTH1N170DHV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 570 VDS = 30V, ID = 0.5A, Note 1 tr td(off) tf VGS = -10V, VDS = 25V, f = 1MHz pF 30 pF 46 ns 38 ns 130 ns 216 ns 47 nC 3.7 nC 25 nC 0.21 0.43 C/W C/W Resistive Switching Times VGS = 5V, VDS = 850V, ID = 0.5A RG = 10 (External) VGS = +5V, VDS = 850V, ID = 0.5A Qgd RthJC RthCS c2 A D1 TO-247HV pF 95 Qg(on) Qgs L1 mS 3090 Crss td(on) E D Ciss Coss 950 TO-263HV-2L Outline 1 H 3 E1 A1 2 L4 L L3 b b2 e2 e1 c PIN: 1 - Gate 2 - Source 3 - Drain A2 Safe-Operating-Area Specification Characteristic Values Min. Typ. Max. Symbol Test Conditions SOA VDS = 1700V, ID = 100mA, TC = 75C, Tp = 5s 170 W TO-247HV Outline VSD trr IRM QRM E R Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) 0.75 2.8 45.0 63.0 IF = 1A, -di/dt = 100A/s VR = 100V, VGS = -10V A2 A E1 0P1 Q S Characteristic Values Min. Typ. Max. IF = 1A, VGS = -10V, Note 1 0P D1 D 1.30 V μs A μC 4 D2 1 2 3 L1 D3 L e e1 A3 2X E2 E3 A1 4X b c 3X 3X PINS: 1 - Gate 2 - Source 3, 4 - Drain Note 1. Pulse test, t  300s, duty cycle, d  2%. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 b1 IXTA1N170DHV IXTH1N170DHV Fig. 2. Extended Output Characteristics @ TJ = 25oC o Fig. 1. Output Characteristics @ TJ = 25 C 3.5 1.0 VGS = 5V 0V VGS = 5V 3.0 0.8 0V 2.5 I D - Amperes I D - Ampere -1V 0.6 0.4 - 2V 2.0 -1V 1.5 1.0 0.2 - 2V 0.5 - 3V - 3V 0.0 0.0 0 2 4 6 8 10 12 14 0 10 20 30 VDS - Volts o 50 60 70 80 Fig. 4. Drain Current @ TJ = 25oC Fig. 3. Output Characteristics @ TJ = 125 C 1 1.E-01 VGS = - 3.25V VGS = 5V 0V 0.8 1.E-02 - 3.50V -1V 1.E-03 0.6 I D - Ampere I D - Ampere 40 VDS - Volts - 2V 0.4 - 3.75V 1.E-04 - 4.00V 1.E-05 - 4.25V 1.E-06 - 4.50V 1.E-07 - 4.75V - 5.00V 0.2 1.E-08 - 3V 1.E-09 0 0 5 10 15 20 25 0 30 200 400 600 800 VDS - Volts 1,000 1,200 1,400 1,600 1,800 2,000 VDS - Volts Fig. 5. Drain Current @ TJ = 100oC Fig. 6. Dynamic Resistance vs. Gate Voltage 1.E+11 1.E-01 VGS = - 3.50V ∆VDS = 1,000V - 500V 1.E+10 1.E-02 - 3.75V - 4.00V 1.E+09 R O - Ohms I D - Ampere 1.E-03 - 4.25V 1.E-04 - 4.5V 1.E-05 200 400 600 800 1,000 1,200 1,400 VDS - Volts © 2017 IXYS CORPORATION, All Rights Reserved 1,600 1,800 o TJ = 100 C 1.E+06 1.E-07 0 1.E+08 1.E+07 - 4.75V - 5.00V 1.E-06 o TJ = 25 C 2,000 1.E+05 -5.00 -4.75 -4.50 -4.25 -4.00 VGS - Volts -3.75 -3.50 -3.25 -3.00 IXTA1N170DHV IXTH1N170DHV Fig. 8. RDS(on) Normalized to ID = 0.5A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 2.6 2.6 2.2 VGS = 0V 2.4 I D = 0.5A 2.2 VGS = 0V 5V RDS(on) - Normalized RDS(on) - Normalized o 1.8 1.4 1.0 TJ = 125 C 2.0 1.8 1.6 1.4 o TJ = 25 C 1.2 1.0 0.6 0.8 0.2 0.6 -50 -25 0 25 50 75 100 125 0 150 0.5 1 1.5 TJ - Degrees Centigrade 2 2.5 3 3.5 I D - Amperes Fig. 9. Input Admittance Fig. 10. Transconductance 2.0 1.4 VDS = 50V VDS = 50V 1.8 1.2 o TJ = - 40 C 1.6 1.4 g f s - Siemens I D - Amperes o 25 C 1.0 0.8 0.6 TJ = 125 C 0.4 25 C o - 40 C o o o 125 C 1.2 1.0 0.8 0.6 0.4 0.2 0.2 0.0 0.0 -4 -3.5 -3 -2.5 -2 -1.5 0 -1 0.2 0.4 0.6 VGS - Volts Fig. 11. Normalized Breakdown and Threshold Voltages vs. Junction Temperature 1.25 1 1.2 1.4 Fig. 12. Forward Voltage Drop of Intrinsic Diode 3.0 VGS = -10V 1.20 2.5 1.15 VGS(off) @ VDS = 25V 2.0 1.10 1.05 I S - Amperes BV / V GS(off) - Normalized 0.8 I D - Amperes BVDSX @ VGS = - 5V 1.00 1.5 o TJ =125 C 1.0 o TJ = 25 C 0.95 0.5 0.90 0.0 0.85 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.3 0.4 0.5 0.6 0.7 VSD - Volts 0.8 0.9 1.0 IXTA1N170DHV IXTH1N170DHV Fig. 13. Capacitance Fig. 14. Gate Charge 10,000 5 Capacitance - PicoFarads f = 1 MHz VDS = 850V 4 I D = 0.5A 3 C iss I G = 10mA 2 VGS - Volts 1,000 Coss 100 1 0 -1 -2 -3 -4 Crss -5 10 0 5 10 15 20 25 30 35 0 40 5 10 Fig. 15. Forward-Bias Safe Operating Area 20 25 30 35 40 45 50 Fig. 16. Forward-Bias Safe Operating Area @ TC = 25oC 10 15 QG - NanoCoulombs VDS - Volts @ TC = 75oC 10 25μs 100μs RDS(on) Limit RDS(on) Limit 1 I D - Amperes I D - Amperes 100μs 1ms 1 1ms 10ms o TJ = 150 C o TC = 25 C Single Pulse DC o TJ = 150 C o TC = 75 C Single Pulse 100ms 0.1 10ms DC 0.1 10 100 1,000 10,000 10 100 VDS - Volts 1,000 100ms 10,000 VDS - Volts Fig. 17. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_1N170D (4M) 01-23-14 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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