IXTH2N170D2

IXTT2N170D2 IXTH2N170D2 Depletion Mode MOSFET VDSX ID(on) RDS(on) = >  1700V 2A 6.5  N-Channel TO-268 (IXTT) G S D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 1700 V VDGX TJ = 25C to 150C, RGS = 1M 1700 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25C 568 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 C C 1.13 / 10 Nm/lb.in. 4 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 G D D (Tab) S G = Gate S = Source D = Drain Tab = Drain Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250A 1700 VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) VGS = 0V, ID = 1A, Note 1 ID(on) VGS = 0V, VDS = 50V, Note 1 - 2.5 • Easy to Mount • Space Savings • High Power Density V - 4.5 100 nA 25 A 500 A TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 6.5 2 Applications V  • • • • • • Audio Amplifiers Start-Up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads A DS100418C(3/17) IXTT2N170D2 IXTH2N170D2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 30V, ID = 1A, Note 1 1.4 Ciss Coss VGS = -10V, VDS = 25V, f = 1MHz 2.2 S 3650 pF 206 pF 80 pF 28 ns 58 ns 33 ns 106 ns 110 nC 12 nC 60 nC 0.21 0.22 C/W C/W Crss td(on) tr td(off) tf Resistive Switching Times VGS = 5V, VDS = 850V, ID = 1A RG = 2 (External) Qg(on) Qgs VGS = +5V, VDS = 850V, ID = 1A Qgd RthJC RthCS TO-247 TO-268 Outline Terminals: 1 - Gate 3 - Source 2,4 - Drain Safe-Operating-Area Specification Characteristic Values Min. Typ. Max. Symbol Test Conditions SOA VDS = 1700V, ID = 120mA, TC = 75C, Tp = 5s 204 W TO-247 Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VSD IF = 2A, VGS = -10V, Note 1 0.75 trr IRM QRM IF = 2A, -di/dt = 100A/s VR = 100V, VGS = -10V 2.8 45.0 63.0 1.30 V 1 2 P 3 μs A μC e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Note 1. Pulse test, t  300s, duty cycle, d  2%. 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT2N170D2 IXTH2N170D2 o o Fig. 1. Output Characteristics @ TJ = 25 C 2.0 VGS = 5V 1V VGS = 5V 1V 5.0 4.5 0V 1.5 0.5V 4.0 I D - Amperes I D - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25 C 5.5 - 0.5V 1.0 -1V 3.5 0V 3.0 2.5 2.0 - 0.5V 1.5 0.5 1.0 -1.5V 0.0 - 2V 0 1 2 3 4 5 6 7 8 9 -1V 0.5 -1.5V 0.0 10 11 0 5 10 VDS - Volts 20 25 30 VDS - Volts o Fig. 3. Output Characteristics @ TJ = 125 C 2.0 15 o Fig. 4. Drain Current @ TJ = 25 C 1.E+01 VGS = 5V 0V - 0.8V - 1.0V - 1.2V 1.E+00 I D - Amperes I D - Amperes VGS = - 0.6V - 0.5V 1.5 -1V 1.0 0.5 - 1.4V 1.E-01 - 1.6V - 1.8V 1.E-02 -1.5V - 2.0V - 2V 0.0 1.E-03 0 4 8 12 16 20 24 0 28 10 20 30 40 VDS - Volts 50 60 70 80 90 VDS - Volts o Fig. 5. Drain Current @ TJ = 100 C 100,000 1.E+01 Fig. 6. Dynamic Resistance vs. Gate Voltage ∆VDS = 70V - 30V o TJ = 25 C - 1.0V 1.E+00 10,000 - 1.2V - 1.4V - 1.6V - 1.8V 1.E-01 RO - Ohms I D - Amperes VGS = - 0.8V o TJ = 100 C 1,000 - 2.0V 100 1.E-02 0 10 20 30 40 50 60 VDS - Volts © 2017 IXYS CORPORATION, All Rights Reserved 70 80 90 -2.0 -1.8 -1.6 -1.4 -1.2 VGS - Volts -1.0 -0.8 -0.6 IXTT2N170D2 IXTH2N170D2 Fig. 8. Normalized RDS(on) vs. Junction Temperature Fig. 7. Dynamic Resistance vs. Gate Voltage 1.E+11 2.8 ∆ VDS = 1300V - 300V VGS = 0V o TJ = 25 C 2.4 RDS(on) - Normalized 1.E+10 RO - Ohms 1.E+09 1.E+08 o TJ = 100 C 1.E+07 1.E+06 I D = 1A 2.0 1.6 1.2 0.8 1.E+05 0.4 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8 -2.6 -2.4 -50 -25 0 VGS - Volts Fig. 9. RDS(on) Normalized to ID = 1A Value vs. Drain Current 2.4 o TJ = 125 C 100 125 150 VDS = 30V 2.5 o 2.0 I D - Amperes RDS(on) - Normalized 75 Fig. 10. Input Admittance 1.8 1.6 1.4 TJ = 125 C o 25 C o - 40 C 1.5 1.0 1.2 o TJ = 25 C 0.5 1.0 0.0 0.8 0 0.5 1 1.5 2 2.5 3 3.5 -3 4 -2.5 -2 -1.5 Fig. 11. Transconductance 5 VDS = 30V -1 -0.5 0 VGS - Volts I D - Amperes Fig. 12. Normalized Breakdown and Threshold Voltages vs. Junction Temperature 1.3 o TJ = - 40 C VGS(off) @ VDS = 25V 1.2 4 o 25 C BV / VGS(off) g f s - Siemens 50 3.0 VGS = 0V 5V 2.2 2.0 25 TJ - Degrees Centigrade 3 o 125 C 2 1 1.1 BVDSX @ VGS = - 5V 1.0 0.9 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 I D - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.8 -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 125 150 IXTT2N170D2 IXTH2N170D2 Fig. 14. Capacitance Fig. 13. Forward Voltage Drop of Intrinsic Diode 10,000 6 VGS = -10V Capacitance - PicoFarads 5 I S - Amperes 4 3 o TJ = 125 C 2 o TJ = 25 C Ciss 1,000 C oss 100 Crss 1 f = 1 MHz 0 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 VSD - Volts 1 10 15 20 25 30 35 40 Fig. 16. Maximum Transient Thermal Impedance Fig. 15. Gate Charge 5 5 Fig. 17. Maximum Transient Thermal Impedance VDS - Volts 0.4 hvj v VDS = 850V 4 I D = 1A 3 0.1 I G = 10mA 1 Z(th)JC - K / W VGS - Volts 2 0 -1 0.01 -2 -3 -4 -5 0 20 40 60 80 100 0.001 0.00001 120 0.0001 QG - NanoCoulombs 0.001 Fig. 17. Forward-Bias Safe Operating Area 0.1 o 25μs RDS(on) Limit 1ms I D - Amperes I D - Amperes RDS(on) Limit 1 10ms 100μs 1ms 1 o TJ = 150 C 10ms o TJ = 150 C 100ms o o TC = 75 C Single Pulse DC 0.1 DC 0.1 10 100 10 @ TC = 75 C 10 100μs TC = 25 C Single Pulse 1 Fig. 18. Forward-Bias Safe Operating Area o @ TC = 25 C 10 0.01 Pulse Width - Seconds 1,000 VDS - Volts © 2017 IXYS CORPORATION, All Rights Reserved 10,000 10 100 1,000 100ms 10,000 VDS - Volts IXYS REF: T_2N170D2(7N) 3-29-17 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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