DSS10-0045A

DSS 10-0045A IFAV = 10 A VRRM = 45 V VF = 0.56 V Power Schottky Rectifier VRSM VRRM V V 45 45 Type A C TO-220 AC C A DSS 10-0045A C (TAB) Symbol Conditions IFRMS IFAV TC = 160°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS IAS = 13 A; L = 180 µH; TVJ = 25°C; non repetitive IAR VA = 1.5·VRRM typ.; f=10 kHz; repetitive si gn A = Anode, C = Cathode , TAB = Cathode Maximum Ratings 35 10 de 140 mJ 1.3 A 1000 V/µs -55...+175 175 -55...+150 °C °C °C 90 W 0.4...0.6 Nm 2 g fo r TVJ TVJM Tstg TC = 25°C Md mounting torque Weight typical Symbol Conditions IR VR = VRRM; TVJ = 25°C VR = VRRM; TVJ = 125°C VF IF = 10 A; IF = 10 A; IF = 20 A; No t Ptot A 24 ne w (dv/dt)cr A A Characteristic Values typ. max. TVJ = 125°C TVJ = 25°C TVJ = 125°C RthJC RthCH 0.5 0.3 2.5 mA mA 0.56 0.68 0.69 V V V 1.7 K/W K/W Features • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Dimensions see Outlines.pdf Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, Conditions and dimensions. © 2006 IXYS All rights reserved 0623 Recommended replacement: DSA15I45PA 20080317a 1-2 DSS 10-0045A 100 1000 10 mA TVJ=175°C A pF 1 150°C IR IF CT 125°C 0.1 100°C 10 TVJ = 175°C 150°C 125°C 25°C 75°C 0.01 50°C 0.001 25°C TVJ= 25°C 1 0.0 100 0.0001 0.2 0.4 0.6 0.8 V 1.0 0 10 20 30 40 A 35 W 25 20 15 15 10 10 5 fo r 5 0 40 80 160°C 120 TC ZthJC D=0.5 0 5 10 15 20 25 IF(AV) 30 A µs tP Fig. 5 Forward power loss characteristics No t Fig. 4 Average forward current IF(AV) versus case temperature TC K/W IFSM 0 0 1 Fig. 3 Typ. junction capacitance CT versus reverse voltage VR d= DC 0.5 0.33 0.25 0.17 0.08 ne w 20 25 40 V 50 30 A P(AV) DC de d=0.5 20 VR Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 30 30 IF(AV) 10 si gn Fig. 1 Maximum forward voltage drop characteristics 0 40 V 50 VR VF 0.33 0.25 0.17 0.08 0.1 Single Pulse (Thermal Resistance) 0.01 0.0001 DSS 10-0045A 0.001 0.01 0.1 s 1 10 t IXYS reserves the right to change limits, Conditions and dimensions. © 2006 IXYS All rights reserved Note: All curves are per diode 0623 Fig. 6 Transient thermal impedance junction to case at various duty cycles 2-2